Results 201 to 210 of about 88,613 (352)

Shallow entangled circuits for quantum time series prediction on IBM devices. [PDF]

Sci Rep
Laskar MR, Goel R.
europepmc   +1 more source

Modulating Surface‐Active Hydrogen for Facilitating Nitrate‐to‐Ammonia Electroreduction on Layered Double Hydroxides Nanosheets

Advanced Functional Materials, EarlyView.
The NiCuFe‐layered double hydroxides nanosheets are synthesized for facilitating nitrate‐to‐ammonia with a high ammonia yield of 1.64 mmol h−1 cm−2, Faradaic efficiency of 94.8% and stability for 15 cycles. The assembled Zn‐nitrate battery delivers a remarkable power density of 12.4 mW cm−2.
Bin Liu, Yuan Wang, Huiming Wen, Yuchen Wang, Heng Liu, Bo Da, Ke Li, Hao Luo, Hao Li, Kai Yan   +9 more
wiley   +1 more source

An integrated large-scale photonic accelerator with ultralow latency. [PDF]

Nature
Hua S, Divita E, Yu S, Peng B, Roques-Carmes C, Su Z, Chen Z, Bai Y, Zou J, Zhu Y, Xu Y, Lu CK, Di Y, Chen H, Jiang L, Wang L, Ou L, Zhang C, Chen J, Zhang W, Zhu H, Kuang W, Wang L, Meng H, Steinman M, Shen Y.   +25 more
europepmc   +1 more source

Fault Detection and Classification in Analogue Integrated Circuits using Robust Heteroscedastic Probabilistic Neural Networks [PDF]

, 1998
Zhengrong Yang, Mark Zwoliński, C.D. Chalk   +2 more
openalex  

Single Solid‐State Ion Channels as Potentiometric Nanosensors

Advanced Functional Materials, EarlyView.
Single gold nanopores functionalized with mixed self‐assembled monolayers act as solid‐state ion channels for direct, selective potentiometric sensing of inorganic ions (Ag⁺). The design overcomes key miniaturization barriers of conventional ion‐selective electrodes by combining low resistivity with suppressed loss of active components, enabling robust
Gergely T. Solymosi, Gyula Jágerszki, Levente Illés, Péter Fürjes, Róbert E. Gyurcsányi   +4 more
wiley   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Low-Cost Sensor Systems and IoT Technologies for Indoor Air Quality Monitoring: Instrumentation, Models, Implementation, and Perspectives for Validation. [PDF]

Sensors (Basel)
Lopes SI, Orłowski C, Branco PTBS, Karatzas K, Villena G, Saffell J, Marques G, Sousa SIV, Lenartz F, Bergmans B, Bigi A, Pflanzner T, Ródenas García M.   +12 more
europepmc   +1 more source

Impact of atomistic device variability on analogue circuit design

, 2011
Hong Feng
openalex   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

Advanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon, Soeun Park, Yeong Kwon Kim, Juhwan Baek, Ki Han Kim, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang, Dong‐Ho Kang   +9 more
wiley   +1 more source

Electronic equivalent of a mechanical impact oscillator. [PDF]

Sci Rep
Denysenko V, Balcerzak M, Dabrowski A.
europepmc   +1 more source