Results 31 to 40 of about 44,340 (259)

Memristor bridge synapse for better artificial neuron perceptron

AIP Advances, 2023
In artificial neural networks, the fourth passive element memristor can be utilized as an electronic synapse that serves as the interface between neurons.
Nuo Wang, Lei Li, Yulong Chen, Hongyu Wang, Zheming Yang, Dingyu Long   +5 more
doaj   +1 more source

Efficacy of Intermittent Theta‐Burst Stimulation for Prolonged Disorders of Consciousness: A Prospective, Randomized, Controlled Trial

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Background Emerging evidence suggests that low‐frequency neural oscillations are dynamically regulated by consciousness levels, with the recovery of low cortical activity potentially serving as a neurophysiological substrate for conscious emergence. Targeted enhancement of these low‐frequency rhythms in patients with disorders of consciousness
Chuan Xu, Jun Hu, Qianqian Wu, Min Wu, Yamei Yu, Hangcheng Li, Jian Gao, Jingqi Li, Nai Ding, Jie Yu, Benyan Luo   +10 more
wiley   +1 more source

Interpreting high levels of unfolded Von Willebrand Factor in patients with the antiphospholipid syndrome

Frontiers in Immunology
IntroductionUnfolded Von Willebrand Factor (VWF) is increased in thrombotic pathologies such as myocardial infarction. Unfolded VWF mediates the binding of platelets without the need for collagen.
Romy de Laat-Kremers, Shengshi Huang, Shengshi Huang, Hugo ten Cate, Hugo ten Cate, Marisa Ninivaggi, Bas de Laat, Bas de Laat, Katrien Devreese, Katrien Devreese   +9 more
doaj   +1 more source

Artificial Synapses Based on an Optical/Electrical Biomemristor

Nanomaterials, 2023
As artificial synapse devices, memristors have attracted widespread attention in the field of neuromorphic computing. In this paper, Al/polymethyl methacrylate (PMMA)/egg albumen (EA)–graphene quantum dots (GQDs)/PMMA/indium tin oxide (ITO) electrically/optically tunable biomemristors were fabricated using the egg protein as a dielectric layer.
Wang, Lu, Wei, Shutao, Xie, Jiachu, Ju, Yuehang, Yang, Tianyu, Wen, Dianzhong   +5 more
openaire   +3 more sources

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Substrate-morphology driven tunable nanoscale artificial synapse

Journal of Asian Ceramic Societies, 2021
Two-terminal memristive devices are considering as a potential candidate to mimic human brain functionality to enable artificial intelligence. Particularly, two-terminal nanoscale devices are regarded as a promising solution for implementing bio-synapses
Shahid Iqbal, Mohit Kumar, Ranveer Singh, Qadeer Akbar Sial, Hyungtak Seo   +4 more
doaj   +1 more source

NOR-Type 3-D Synapse Array Architecture Based on Charge-Trap Flash Memory

IEEE Journal of the Electron Devices Society, 2022
In this work, we proposed a three-dimensional (3-D) channel stacked array architecture based on charge-trap flash (CTF) memory for an artificial neural network accelerator.
Jung Nam Kim, Jaehong Lee, Jo Eun Kim, Suck Won Hong, Minsuk Koo, Yoon Kim   +5 more
doaj   +1 more source

Tunnel junction based memristors as artificial synapses [PDF]

Frontiers in Neuroscience, 2015
We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%.
Thomas, Andy, Niehörster, Stefan, Fabretti, Savio, Shepheard, Norman, Kuschel, Olga, Küpper, Karsten, Wollschläger, Joachim, Krzysteczko, Patryk, Chicca, Elisabetta   +8 more
openaire   +4 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source