Results 221 to 230 of about 8,035 (281)

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

Advanced Electronic Materials, EarlyView.
“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen, Patrik Eskelinen, Sampo Inkinen, Olli‐Pekka Kilpi, Karl‐Magnus Persson   +4 more
wiley   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

Hybrid Heterostructures of Nanostructured Si Membrane and MoS2 for Self‐Powered Photodetectors

Advanced Electronic Materials, EarlyView.
A scalable MoS2/Si nanomesh vertical heterostructure is developed for self‐powered photodetection. The nanostructured junction enhances conductivity, expands the active heterointerface, and enables a transition from photovoltaic to avalanche‐assisted operation, delivering markedly improved photoresponse over planar counterparts.
Jingying Liu, Zhichen Wan, Haoran Mu, Siqi Deng, Mohammad M. Hossain, Udo Bach, Shenghuang Lin, Qingdong Ou, Sudha Mokkapati   +8 more
wiley   +1 more source

From Materials to Systems: Challenges and Solutions for Fast‐Charge/Discharge Na‐Ion Batteries

Advanced Energy Materials, EarlyView.
This review systematically analyzes the key characteristics limiting the fast‐charge/discharge capability of Na‐ion batteries (SIBs) from a multi‐scale perspective encompassing electrode materials, the electrode‐electrolyte interface, and the system. Furthermore, it presents practical solution strategies for the fundamental issues arising at each scale,
Bonyoung Ku, Sangbin Park, Sunha Hwang, Sunghyun Lim, Won‐Sub Yoon, Jongsoon Kim   +5 more
wiley   +1 more source

Degradation Pathways of Silicon‐Based Anodes in Lithium‐Ion Batteries

Advanced Energy Materials, EarlyView.
Silicon‐based anodes undergo degradation through five primary pathways: (1) mechanical and structural deterioration of the active material, (2) loss of electrode integrity and electrical contact, (3) mechanical instability of the solid electrolyte interphase (SEI), characterized by repetitive fracture and deformation, (4) chemical instability of the ...
Yoon Jeong Choi, Ji‐Youn Bae, Ga‐On Park, Seung‐Ho Yu   +3 more
wiley   +1 more source