Results 11 to 20 of about 280,313 (347)

Plasma-Assisted Atomic Layer Deposition of IrO₂ for Neuroelectronics

Nanomaterials, 2023
In vitro and in vivo stimulation and recording of neuron action potential is currently achieved with microelectrode arrays, either in planar or 3D geometries, adopting different materials and strategies. IrO2 is a conductive oxide known for its excellent
Valerio Di Palma, Andrea Pianalto, Michele Perego, Graziella Tallarida, Davide Codegoni, Marco Fanciulli   +5 more
doaj   +1 more source

Multiferroic/Polymer Flexible Structures Obtained by Atomic Layer Deposition

Nanomaterials, 2022
The paper considers how a film of bismuth ferrite BiFeO3 (BFO) is formed on a polymeric flexible polyimide substrate at low temperature ALD (250 °C). Two samples of BFO/Polyimide with different thicknesses (42 nm, 77 nm) were studied.
Shikhgasan Ramazanov, Dinara Sobola, Gaji Gajiev, Farid Orudzhev, Pavel Kaspar, Adil Gummetov   +5 more
doaj   +1 more source

Atomic Layer Deposition of Antibacterial Nanocoatings: A Review

Antibiotics, 2023
In recent years, antibacterial coatings have become an important approach in the global fight against bacterial pathogens. Developments in materials science, chemistry, and biochemistry have led to a plethora of materials and chemical compounds that have
Denis Nazarov, Lada Kozlova, Elizaveta Rogacheva, Ludmila Kraeva, Maxim Maximov   +4 more
doaj   +1 more source

Atomic layer deposition for biosensing applications [PDF]

Biosensors and Bioelectronics, 2018
Atomic layer deposition (ALD) is a thin film deposition technique currently used in various nanofabrication processes for microelectronic applications. The ability to coat high aspect ratio structures with a wide range of materials, the excellent conformality, and the exquisite thickness control have made ALD an essential tool for the fabrication of ...
Graniel, Octavio, Weber, Matthieu, Balme, Sebastien, Miele, Philippe, Bechelany, Mikhael   +4 more
openaire   +6 more sources

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Crystals, 2021
In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively.
Il-Hwan Hwang, Myoung-Jin Kang, Ho-Young Cha, Kwang-Seok Seo   +3 more
doaj   +1 more source

Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation [PDF]

, 2007
The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion.
A. M. Sonnet, B. Lee, C. L. Hinkle, E. M. Vogel, F. S. Aguirre-Tostado, G. J. Hughes, J. Kim, K. J. Choi, M. Milojevic, Nicollian E. H., R. M. Wallace, S. McDonnell   +11 more
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Atomic Layer Deposition of Metal Phosphates [PDF]

ECS Meeting Abstracts, 2022
Since the introduction of lithium iron phosphate (LFP) as an electrode material for Li-ion batteries (LIB’s), metal phosphates in general have become increasingly important. The strong covalency of the P-O bonds typically results in a very good thermal and structural stability, which is one of the main reasons for the success of LFP as a LIB ...
Lowie Henderick, Arpan Dhara, Andreas Werbrouck, Jolien Dendooven, Christophe Detavernier   +4 more
openaire   +2 more sources

Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition

Journal of Microelectronic Manufacturing, 2019
Thin film deposition is one of the most important processes in IC manufacturing. In this paper, several typical models and numerical simulation methods for thin film deposition and atomic layer deposition are introduced. Several modeling methods based on
Lei Qu, Rui Chen, Xiaoting Li, Jing Zhang, Yanrong Wang, Shuhua Wei, Jiang Yan, Yayi Wei   +7 more
doaj   +1 more source

Application of atomic layer deposition in nanophotonics [PDF]

SPIE Proceedings, 2014
We review our recent results on using Atomic Layer Deposition (ALD) in fabrication of nanophotonic waveguide devices. ALD is a unique thin film deposition method providing atomic level control of film composition and thickness, perfect step coverage, and large-area uniformity. We employ the advantages of ALD in connection with Sinanophotonics.
Karvonen, Lasse, Säynätjoki, Antti, Roussey, Matthieu, Kuittinen, Markku, Honkanen, Seppo   +5 more
openaire   +4 more sources

Particle atomic layer deposition [PDF]

Journal of Nanoparticle Research, 2019
The functionalization of fine primary particles by atomic layer deposition (particle ALD) provides for nearly perfect nanothick films to be deposited conformally on both external and internal particle surfaces, including nanoparticle surfaces. Film thickness is easily controlled from several angstroms to nanometers by the number of self-limiting ...
openaire   +3 more sources