Results 11 to 20 of about 280,118 (298)

Multiferroic/Polymer Flexible Structures Obtained by Atomic Layer Deposition

open access: yesNanomaterials, 2022
The paper considers how a film of bismuth ferrite BiFeO3 (BFO) is formed on a polymeric flexible polyimide substrate at low temperature ALD (250 °C). Two samples of BFO/Polyimide with different thicknesses (42 nm, 77 nm) were studied.
Shikhgasan Ramazanov   +5 more
doaj   +1 more source

A review of atomic layer deposition modelling and simulation methodologies: Density functional theory and molecular dynamics

open access: yesNanotechnology Reviews, 2022
The use of computational modelling and simulation methodologies has grown in recent years as researchers try to understand the atomic layer deposition (ALD) process and create new microstructures and nanostructures.
Sibanda David   +2 more
doaj   +1 more source

Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics

open access: yesNanomaterials, 2023
In vitro and in vivo stimulation and recording of neuron action potential is currently achieved with microelectrode arrays, either in planar or 3D geometries, adopting different materials and strategies. IrO2 is a conductive oxide known for its excellent
Valerio Di Palma   +5 more
doaj   +1 more source

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

open access: yesCrystals, 2021
In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively.
Il-Hwan Hwang   +3 more
doaj   +1 more source

Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation [PDF]

open access: yes, 2007
The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion.
A. M. Sonnet   +11 more
core   +1 more source

Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition

open access: yesJournal of Microelectronic Manufacturing, 2019
Thin film deposition is one of the most important processes in IC manufacturing. In this paper, several typical models and numerical simulation methods for thin film deposition and atomic layer deposition are introduced. Several modeling methods based on
Lei Qu   +7 more
doaj   +1 more source

Particle atomic layer deposition [PDF]

open access: yesJournal of Nanoparticle Research, 2019
The functionalization of fine primary particles by atomic layer deposition (particle ALD) provides for nearly perfect nanothick films to be deposited conformally on both external and internal particle surfaces, including nanoparticle surfaces. Film thickness is easily controlled from several angstroms to nanometers by the number of self-limiting ...
openaire   +2 more sources

Atomic layer deposition for quantum dots based devices

open access: yesOpto-Electronic Advances, 2020
Quantum dots (QDs) are promising candidates for the next-generation optical and electronic devices due to the outstanding photoluminance efficiency, tunable bandgap and facile solution synthesis.
Zhou Binze   +4 more
doaj   +1 more source

GaAs interfacial self-cleaning by atomic layer deposition [PDF]

open access: yes, 2008
The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy.
A. M. Sonnet   +12 more
core   +1 more source

Coating strategies for atomic layer deposition

open access: yesNanotechnology Reviews, 2017
Atomic layer deposition (ALD) is a vapor phase technique capable of producing a variety of materials. It consists of the alternation of separate self-limiting surface reactions, which enables accurate control of film thickness at the Angstrom level.
Hu Liang, Qi Weihong, Li Yejun
doaj   +1 more source

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