Results 21 to 30 of about 280,313 (347)

Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition [PDF]

open access: yesJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2011
Atomic layer deposition (ALD) is a technique capable of producing ultrathin conformal films with atomic level control over thickness. A major drawback of ALD is its low deposition rate, making ALD less attractive for applications that require high throughput processing.
Poodt, P.W.G.   +8 more
openaire   +3 more sources

In0.5Ga0.5N Layers by Atomic Layer Deposition [PDF]

open access: yesJournal of Materials Chemistry C, 2021
We present an ALD approach to metastable In1‑xGaxN with 0.1 < x < 0.5 based on co-sublimed solid In- and Ga-precursors that were co-sublimed into the deposition chamber in one pulse. A near In0.5Ga0.5N film with a bandgap of 1.94 eV was achieved on Si (100) substrate. Epitaxial In1‑xGaxN (0002) was successfully grown directly on 4H-SiC (0001).
Polla Rouf   +4 more
openaire   +4 more sources

GaAs interfacial self-cleaning by atomic layer deposition [PDF]

open access: yes, 2008
The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy.
A. M. Sonnet   +12 more
core   +1 more source

Coating strategies for atomic layer deposition

open access: yesNanotechnology Reviews, 2017
Atomic layer deposition (ALD) is a vapor phase technique capable of producing a variety of materials. It consists of the alternation of separate self-limiting surface reactions, which enables accurate control of film thickness at the Angstrom level.
Hu Liang, Qi Weihong, Li Yejun
doaj   +1 more source

Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3 / SrRuO3 bilayers [PDF]

open access: yes, 2004
Epitaxial La0.67Sr0.33MnO3 (LSMO)/ SrRuO3 (SRO) ferromagnetic bilayers have been grown on (001) SrTiO3 (STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same
C. B. Eom   +4 more
core   +1 more source

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

open access: yesNanomaterials, 2021
This paper reports an investigation of the structural, chemical and electrical properties of ultra-thin (5 nm) aluminum nitride (AlN) films grown by plasma enhanced atomic layer deposition (PE-ALD) on gallium nitride (GaN).
Emanuela Schilirò   +12 more
doaj   +1 more source

Atomic layer deposition for quantum dots based devices

open access: yesOpto-Electronic Advances, 2020
Quantum dots (QDs) are promising candidates for the next-generation optical and electronic devices due to the outstanding photoluminance efficiency, tunable bandgap and facile solution synthesis.
Zhou Binze   +4 more
doaj   +1 more source

Controlled Crystallinity of TiO2 Layers Grown by Atmospheric Pressure Spatial Atomic Layer Deposition and their Impact on Perovskite Solar Cell Efficiency

open access: yesInternational Journal of Photoenergy, 2022
Atmospheric Pressure Spatial Atomic Layer Deposition (AP-SALD) is an upcoming deposition technique suitable for a variety of materials and combines the benefits of a regular atomic layer deposition with a significantly increased deposition rate at ...
Eugen Zimmermann   +6 more
doaj   +1 more source

Magnesium Sublimation for Growing Thin Films and Conformal Coatings on 1D Nanostructures

open access: yesNanomanufacturing, 2022
A method to conformally coat silica nanosprings with magnesium via sublimation at 450 °C has been developed. In addition, Mg thin films were grown on Si(100) using this method to determine the effects of substrate morphology (nanoscale curvatures vs ...
Aaron J. Austin   +7 more
doaj   +1 more source

Material manufacturing from atomic layer

open access: yesInternational Journal of Extreme Manufacturing, 2023
Atomic scale engineering of materials and interfaces has become increasingly important in material manufacturing. Atomic layer deposition (ALD) is a technology that can offer many unique properties to achieve atomic-scale material manufacturing ...
Xinwei Wang, Rong Chen, Shuhui Sun
doaj   +1 more source

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