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, 2015 Atomic layer deposition (ALD), also referred to historically as atomic layer epitaxy, is a vapor-phase deposition technique for preparing ultra-thin films with precise growth control. ALD is currently rapidly evolving, mostly driven by the continuous trend in the miniaturization of electronic devices. In addition, many other innovative technologies are
Knoops, H.C.M. +3 more
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Organoselenium Precursors for Atomic Layer Deposition [PDF]
ACS Omega, 2021 Organoselenium compounds with perspective application as Se precursors for atomic layer deposition have been reviewed. The originally limited portfolio of available Se precursors such as H2Se and diethyl(di)selenide has recently been extended by bis(trialkylsilyl)selenides, bis(trialkylstannyl)selenides, cyclic selenides, and tetrakis(N,N ...
Jaroslav Charvot +3 more
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Atomic Layer Deposited Protective Layers [PDF]
Materials Science Forum, 2016 This paper reviews the use of Atomic Layer Deposition (ALD) in protective coatings. Because of the growth principle ALD allows the deposition of dense conformal films on substrates of different size and shape. Recently, ALD has received increasingly interest in deposition of protective coatings.
Salmi E., Leskelä M., Ritala M.
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ZnO layers deposited by Atomic Layer Deposition [PDF]
Journal of Physics: Conference Series, 2013 The structure of 40 nm thick epitaxial ZnO layers grown on single crystalline sapphire and GaN substrates by atomic layer deposition has been studied using transmission electron microscopy. The growth is carried out between 150?C and 300?C without any buffer layer using di-ethyl zinc and water precursors.
Pécz, Béla +3 more
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Tuning the Electrical Properties of Titanium Oxide Bilayers Prepared by Atomic Layer Deposition at Different Temperatures [PDF]
, 2019 Carrier‐selective contacts prepared by atomic layer deposition (ALD) have received significant attention for developing high‐efficiency solar cells. Herein, the electrical properties of titanium oxide (TiOx) prepared by ALD are manipulated by modulating ...
Noritaka Usami +7 more
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Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Crystals, 2021 In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively.
Il-Hwan Hwang +3 more
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Coating strategies for atomic layer deposition
Nanotechnology Reviews, 2017 Atomic layer deposition (ALD) is a vapor phase technique capable of producing a variety of materials. It consists of the alternation of separate self-limiting surface reactions, which enables accurate control of film thickness at the Angstrom level.
Hu Liang, Qi Weihong, Li Yejun
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Atomic layer deposition for quantum dots based devices
Opto-Electronic Advances, 2020 Quantum dots (QDs) are promising candidates for the next-generation optical and electronic devices due to the outstanding photoluminance efficiency, tunable bandgap and facile solution synthesis.
Zhou Binze +4 more
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Modelling water vapor permeability through atomic layer deposition coated photovoltaic barrier defects [PDF]
, 2014 Transparent barrier films such as Al2O3 used for prevention of oxygen and/or water vapour permeation are the subject of increasing research interest when used for the encapsulation of flexible photovoltaic modules.
Robbins, David +5 more
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