Results 71 to 80 of about 280,118 (298)

Piezoresistive Monitoring of Carbon Nanomaterial‐Reinforced Epoxy Composites Under Cyclic and Fatigue Loading: A Review

Advanced Engineering Materials, EarlyView.
Carbon nanomaterial‐reinforced epoxy composites exhibit pronounced piezoresistive behavior, enabling intrinsic damage sensing under cyclic and fatigue loading. This review critically compares carbon nanotube and graphene systems, correlating filler content, percolation threshold, and gauge factor with sensing stability and damage evolution.
J. M. Parente, J. Nunes‐Pereira, A. P. Silva, P. N. B. Reis   +3 more
wiley   +1 more source

Preventing unwanted atomic layer deposition by liquid sealing

Nano Trends
Atomic layer deposition (ALD) is an essential thin film fabrication technique widely used in electronic and energy systems, but avoiding ALD in untargeted areas has been a long-standing challenge that excludes the possibility of creating patterns through
Haochuan Wang, Zhibin Yi, Chun Li, Rui Xia, Yan Shao, Shaohu Zhan, Wenshuai Feng, Rui-Tao Wen, Xing Cheng, Guangfu Luo, Yanhao Yu   +10 more
doaj   +1 more source

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

Nanoscale Research Letters, 2021
In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching.
Yen-Wei Yeh, Su-Hui Lin, Tsung-Chi Hsu, Shouqiang Lai, Po-Tsung Lee, Shui-Yang Lien, Dong-Sing Wuu, Guisen Li, Zhong Chen, Tingzhu Wu, Hao-Chung Kuo   +10 more
doaj   +1 more source

Spatial Atomic Layer Deposition

, 2021
In conventional atomic layer deposition (ALD), precursors are exposed sequentially to a substrate through short pulses while kept physically separated by intermediate purge steps. Spatial ALD (SALD) is a variation of ALD in which precursors are continuously supplied in different locations and kept apart by an inert gas region or zone.
D., Muñoz-Rojas,, V.H., Nguyen, M.C., de la Huerta, C., Jiménez, D., Bellet   +4 more
openaire   +1 more source

Atomic Layer Deposition of Rhenium Disulfide [PDF]

Advanced Materials, 2018
Abstract2D materials research is advancing rapidly as various new “beyond graphene” materials are fabricated, their properties studied, and materials tested in various applications. Rhenium disulfide is one of the 2D transition metal dichalcogenides that has recently shown to possess extraordinary properties such as that it is not limited by the strict
Jani Hämäläinen, Miika Mattinen, Kenichiro Mizohata, Kristoffer Meinander, Marko Vehkamäki, Jyrki Räisänen, Mikko Ritala, Markku Leskelä   +7 more
openaire   +3 more sources

Simulations of energetic beam deposition: from picoseconds to seconds

, 1998
We present a new method for simulating crystal growth by energetic beam deposition. The method combines a Kinetic Monte-Carlo simulation for the thermal surface diffusion with a small scale molecular dynamics simulation of every single deposition event ...
A. E. DePristo, A. F. Voter, B. H. Cooper, B. W. Karr, C. L. Kelchner, C. M. Gilmore, E. E. Fullerton, E. E. Fullerton, F. A. Smidt, F. A. Smidt, G. Betz, G. Rangelov, G. Rosenfeld, G. T. Barkema, H. Brune, H. Ueda, J. A. Spraque, J. E. Greene, J. Jacobsen, J. Jacobsen, J. Jacobsen, J. W. Rabalais, James P. Sethna, Joachim Jacobsen, K. A. Fichthorn, K. W. Jacobsen, K. W. Jacobsen, K.W. Jacobsen, M. Henzler, M. Hohage, M. J. Caturla, M. Jaraiz, M. Kalff, M. Kalff, M. Kitabatake, M. P. Allen, M. V. Ramana Murty, M. Villarba, N. E. Lee, P. J. Feibelman, P. J. Feibelman, S. Esch, S. I. Kim, S. Nagamachi, S. Nagamachi, T. Michely, T. Ohashi, T. Sakamoto, W. Shindo   +48 more
core   +1 more source

Electrical Conductivities of Conductors, Semiconductors, and Their Mixtures at Elevated Temperatures

Advanced Engineering Materials, EarlyView.
This article presents a comprehensive review of temperature‐dependent electrical conductivity data for multiple material classes at elevated temperatures, highlighting a persistent conductivity gap between metals and semiconductors in the range of 102$\left(10\right)^{2}$– 107$\left(10\right)^{7}$ S/m. Metal–ceramic irregular metamaterials are proposed
Valentina Torres Nieto, Marcia A. Cooper
wiley   +1 more source

Removing Oxide Layers and Retaining Oxide‐Free Steel Surfaces by Polishing in Oxygen‐Free Atmosphere

Advanced Engineering Materials, EarlyView.
In this study, the efficacy of wet mechanical polishing under an oxygen‐free atmosphere for deoxidation and the retention of an oxide‐free steel surface are elucidated using X‐ray photoelectron spectroscopy. The methodology proved successful; however, the results were highly dependent on the preparation of the solvents used to clean the samples after ...
Friedrich Bürger, Lienhard Wegewitz, Wolfgang Maus‐Friedrichs   +2 more
wiley   +1 more source

Al2O3 on WSe2 by ozone based atomic layer deposition: Nucleation and interface study

APL Materials, 2017
In this work, the atomic layer deposition process using ozone and trimethylaluminum (TMA) for the deposition of Al2O3 films on WSe2 was investigated. It was found that the ozone-based atomic layer deposition enhanced the nucleation of Al2O3 in comparison
Angelica Azcatl, Qingxiao Wang, Moon J. Kim, Robert M. Wallace   +3 more
doaj   +1 more source

Fabrication of Nb/Al2O3/Nb Josephson Junctions using in situ Magnetron Sputtering and Atomic Layer Deposition

, 2013
Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in ...
Elliot, Alan J., Ewing, Daniel J., Han, Siyuan, Lewis, Rupert M., Lu, Rongtao, Mao, Bo, Schulze, Heidi M., Talvacchio, John, Wille, Logan, Wu, Judy Z., Xue, G. M., Yu, H. F., Zhao, S. P.   +12 more
core   +1 more source