Results 61 to 70 of about 282,530 (298)

Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology

Advanced Engineering Materials, EarlyView.
We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham, Chenyu Wen, Mohammad Hadi Khaksaran, Won‐Yong Lee, Javier Cruz, Klas Hjort, Dongping Wu, Shi‐Li Zhang   +7 more
wiley   +1 more source

Atomic layer deposition and superconducting properties of NbSi films

, 2011
Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and quadrupole mass ...
Becker, Nicholas G., Claus, Helmut, Elam, Jeffrey W., Klug, Jeffrey A., Pellin, Michael, Proslier, Thomas   +5 more
core   +1 more source

Molybdenum Disulfide Catalytic Coatings via Atomic Layer Deposition for Solar Hydrogen Production from Copper Gallium Diselenide Photocathodes [PDF]

, 2019
We demonstrate that applying atomic layer deposition-derived molybdenum disulfide (MoS2) catalytic coatings on copper gallium diselenide (CGSe) thin film absorbers can lead to efficient wide band gap photocathodes for photoelectrochemical hydrogen ...
Blum, M, Carter, J, Deangelis, AD, Gaillard, N, Hellstern, TR, Heske, C, Horsley, K, Jaramillo, TF, Palm, DW, Weinhardt, L, Yang, W   +10 more
core   +3 more sources

Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2011
Atomic layer deposition (ALD) is a technique capable of producing ultrathin conformal films with atomic level control over thickness. A major drawback of ALD is its low deposition rate, making ALD less attractive for applications that require high throughput processing.
Poodt, P.W.G., Cameron, D.C., Dickey, E., George, S.M., Kuznetsov, V., Parsons, G.N., Roozeboom, F., Sundaram, G., Vermeer, A.   +8 more
openaire   +3 more sources

Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition? [PDF]

ECS Journal of Solid State Science and Technology, 2015
Current trends in semiconductor device manufacturing impose extremely stringent requirements on nanoscale processing techniques, both in terms of accurately controlling material properties and in terms of precisely controlling nanometer dimensions. To take nanostructuring by dry etching to the next level, there is a fast growing interest in so-called ...
Faraz, T., Roozeboom, F., Knoops, H.C.M., Kessels, W.M.M.   +3 more
openaire   +3 more sources

Innovative Processing of Compacted Waste Aluminum Alloy Powders via Controlled Remelting and Solidification

Advanced Engineering Materials, EarlyView.
This study demonstrates an efficient recycling route for out‐of‐spec AlSi10Mg atomized powders through compaction and arc remelting followed by suction casting. By correlating compaction load, cooling rate, and resulting microstructure, we show that intermediate pressures (50–80 kN) and rapid cooling refine dendrites, reduce porosity, and enhance ...
Mila Christy de Oliveira, Marcella Gaute Cavalcante Xavier, Abdoul‐Aziz Bogno, Piter Gargarella, José Eduardo Spinelli   +4 more
wiley   +1 more source

Atomic layer processing for Ångström-scale precision in 3D-integrated semiconductor manufacturing

International Journal of Extreme Manufacturing
For decades, conventional geometric scaling has driven performance improvements in the semiconductor industry. However, the continued reduction in technology nodes has increasingly become decoupled from simple dimensional shrinkage, instead reflecting ...
Hae Lin Yang, Min Chan Kim, Gi-Beom Park, Ji-Yeon Park, Hyein Park, Jihoon Shin, Jinho Ahn, Jin-Seong Park   +7 more
doaj   +1 more source

The optical properties of transferred graphene and the dielectrics grown on it obtained by ellipsometry

, 2018
Graphene layers grown by chemical vapour deposition (CVD) method and transferred from Cu-foils to the oxidized Si-substrates were investigated by spectroscopic ellipsometry (SE), Raman and X-Ray Photoelectron Spectroscopy (XPS) methods.
Alles, Harry, Kahro, Tauno, Kasikov, Aarne, Kodu, Margus, Matisen, Leonard, Seemen, Helina, Tarre, Aivar   +6 more
core   +1 more source

Influence of Sample Preparation and Processing Procedures on the Thermal Diffusivity of MgO‐C Refractories

Advanced Engineering Materials, EarlyView.
The thermal diffusivity of MgO‐C refractories is highly sensitive to sample preparation and processing procedures. In this article, the effects of coking sequence, machining conditions, structural inhomogeneity, and graphite coating application on measurements using laser flash apparatus are systematically investigated.
Luyao Pan, Rhena Wulf, Till M. J. Stadtmüller, Christos G. Aneziris, Tobias M. Fieback   +4 more
wiley   +1 more source

Manganese bismuth films with narrow transfer characteristics for Curie-point switching [PDF]

, 1974
Manganese bismuth films having improved characteristics for recording information in analogue form, can be produced by a vacuum deposition of Bi and Mn with an atomic ratio of Mn to Bi between 2 and 3.5 or 1.4 and 1.6, followed by a specialized heat ...
Guisinger, J. E., Lewicki, G. W.
core   +1 more source