Results 41 to 50 of about 29,849 (211)

Atomic layer deposition-based tuning of the pore size in mesoporous thin films studied by in situ grazing incidence small angle x-ray scattering

, 2014
Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the technique suitable for pore size tuning at the atomic level, e.g., for applications in catalysis, gas separation and sensing.
Bals, Sara, Dendooven, Jolien, Detavernier, Christophe, Devloo-Casier, Kilian, Grandfield, Kathryn, Ide, Matthias, Kurttepeli, Mert, Ludwig, Karl F., Van Der Voort, Pascal   +8 more
core   +1 more source

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs [PDF]

, 2015
Al2O3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition ...
Aubry, R., di Forte-Poisson, M. A., Gamarra, P., Hjelmgren, Hans, Lacam, C., Malmros, Anna, Rorsman, Niklas, Thorsell, Mattias, Tordjman, M.   +8 more
core   +1 more source

Novel Energetic Co-Reactant for Thermal Oxide Atomic Layer Deposition: The Impact of Plasma-Activated Water on Al₂O₃ Film Growth

Nanomaterials, 2023
In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced.
João Chaves, William Chiappim, Júlia Karnopp, Benedito Neto, Douglas Leite, Argemiro da Silva Sobrinho, Rodrigo Pessoa   +6 more
doaj   +1 more source

Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

C, 2019
Graphene (Gr) with its distinctive features is the most studied two-dimensional (2D) material for the new generation of high frequency and optoelectronic devices. In this context, the Atomic Layer Deposition (ALD) of ultra-thin high-k insulators on Gr is
Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Filippo Giannazzo   +3 more
doaj   +1 more source

Atomic-scale engineering of advanced catalytic and energy materials via atomic layer deposition for eco-friendly vehicles

International Journal of Extreme Manufacturing, 2023
Zero-emission eco-friendly vehicles with partly or fully electric powertrains have exhibited rapidly increased demand for reducing the emissions of air pollutants and improving the energy efficiency.
Xiao Liu, Yu Su, Rong Chen
doaj   +1 more source

Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials [PDF]

, 2020
Atomic layer deposition (ALD) on mechanically exfoliated 2D layered materials spontaneously produces network patterns of metal oxide nanoparticles in triangular and linear deposits on the basal surface.
Cabán-Acevedo, Miguel, Lewis, Nathan S., Mazza, Michael F., Thompson, Annelise C., Wiensch, Joshua D.   +4 more
core  

Organic and inorganic–organic thin film structures by molecular layer deposition: A review [PDF]

, 2014
The possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly ...
Karppinen, Maarit, Sundberg, Pia
core   +2 more sources

A Comparative Passivation Study for InAs/GaSb Pin Superlattice Photodetectors [PDF]

, 2013
Cataloged from PDF version of article.In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD).
Aydinli, A., Muti, A., Salihoglu, O.
core   +1 more source

Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

IEEE Journal of the Electron Devices Society
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park, Prasanna Venkat Ravindran, Dipjyoti Das, Priyankka Gundlapudi Ravikumar, Chengyang Zhang, Nashrah Afroze, Lance Fernandes, Yu Hsin Kuo, Jae Hur, Hang Chen, Mengkun Tian, Winston Chern, Shimeng Yu, Asif Islam Khan   +13 more
doaj   +1 more source

Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements

AIP Advances, 2023
Recent demonstrations of grafted p-n junctions combining n-type GaN with p-type semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like heterostructures.
Shuoyang Qiu, Jiarui Gong, Jie Zhou, Tien Khee Ng, Ranveer Singh, Moheb Sheikhi, Boon S. Ooi, Zhenqiang Ma   +7 more
doaj   +1 more source