4H–SiC Avalanche Photodiode Linear Array Operating in Geiger Mode
IEEE Photonics Journal, 2017 In this study, a 50-pixel linear array of 4H–SiC ultraviolet avalanche photodiodes operating in Geiger mode is reported for the first time. The 50 pixels within the linear array are all capable of detecting single photons but with a small number ...
Lianghui Li +10 more
doaj +1 more source
Low-Noise and High-Efficiency Near-IR SPADs in 110nm CIS Technology [PDF]
, 2019 Photon detection at longer wavelengths is much desired for LiDAR applications. Silicon photodiodes with deeper junctions and larger multiplication regions are in principle more sensitive to near-IR photons.
Carmona Galán, Ricardo +2 more
core +1 more source
Timing performance of 30-nm-wide superconducting nanowire avalanche photodetectors [PDF]
, 2011 We investigated the timing jitter of superconducting nanowire avalanche photodetectors (SNAPs, also referred to as cascade switching superconducting single photon detectors) based on 30-nm-wide nanowires. At bias currents (IB) near the switching current,
E. Dauler +5 more
core +2 more sources
Characterisation Studies of Silicon Photomultipliers
, 2010 This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the ...
Alexander Tadday +19 more
core +1 more source
Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes [PDF]
, 2005 The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise and breakdown voltage are modeled for avalanche photodiodes (APDs), both with InP and with InAlAs multiplication regions.
David, J.P.R. +3 more
core +2 more sources
Characteristics Measurement in a Deep UV Single Photon Detector Based on a TE-cooled 4H-SiC APD
IEEE Photonics Journal, 2023 We report on the characteristics of a lab-assembled UV single photon detector based on a thermoelectrically cooled silicon carbide (4H-SiC) avalanche photodiode (APD).
In-Ho Bae +3 more
doaj +1 more source
An avalanche-photodiode-based photon-number-resolving detector
, 2008 Avalanche photodiodes are widely used as practical detectors of single photons.1 Although conventional devices respond to one or more photons, they cannot resolve the number in the incident pulse or short time interval.
A Splinelli +22 more
core +1 more source
Effect of dead space on avalanche speed [PDF]
, 2002 The effects of dead space (the minimum distance travelled by a carrier before acquiring enough energy to impact ionize) on the current impulse response and bandwidth of an avalanche multiplication process are obtained from a numerical model that ...
A. H. You +9 more
core +1 more source
Bit Error Rates for Ultrafast APD Based Optical Receivers: Exact and Large Deviation Based Asymptotic Approaches [PDF]
, 2009 Exact analysis as well as asymptotic analysis, based on large-deviation theory (LDT), are developed to compute the bit-error rate (BER) for ultrafast avalanche-photodiode (APD) based optical receivers assuming on-off keying and direct detection.
Das, Abhik K. +2 more
core +1 more source
An integral gated mode single photon detector at telecom wavelengths
, 2007 We demonstrate an integral gated mode single photon detector at telecom wavelengths. The charge number of an avalanche pulse rather than the peak current is monitored for single-photon detection.
Bennett C H Brassard G +10 more
core +1 more source