Results 161 to 170 of about 16,481 (212)
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Avalanche-Photodiode Frequency Response
Journal of Applied Physics, 1967The short-circuit photocurrent from an avalanche photodiode is calculated using an exact solution of the differential transport equations for the multiplication region. The dc electric field and the hole and electron velocities are assumed constant in the avalanche region into which photoelectrons are injected.
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Ultralow-noise avalanche photodiodes
SPIE Proceedings, 2001InP/In0.53Ga0.47As avalanche photodiodes (APDs) have been widely deployed in high-bit-rate, long-haul fiber optic communication systems due to the higher sensitivity, relative to a PIN photodiode, afforded by internal gain of the APD. Owing to their materials and structural limitations it is uncertain whether the performance of InP-based APDs will be ...
Joe C. Campbell +7 more
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CMOS-compatible avalanche photodiodes
SPIE Proceedings, 1998As a step towards a complete CMOS avalanche photodiode imager, various avalanche photodiodes have been integrated in a commercially available CMOS process. In this paper, design considerations are discussed and experimental results are compared for a wide variety of diodes. The largest restriction is that no process change is allowed.
Alice Biber, Peter Seitz
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Improved germanium avalanche photodiodes
IEEE Journal of Quantum Electronics, 1980New kinds of germanium avalanche photodiodes with n+-n-p and p+-n structures were devised for improved excess noise and high quantum efficiency performance. Multiplication noise, quantum efficiency, and pulse response were studied and compared with those of the conventional n+-p structure diode.
O. Mikami +5 more
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Recent advances in avalanche photodiodes
2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference, 2006The paper reports on recent work on avalanche photodiodes (APDs) which focused on developing new structures and incorporating alternative materials that will yield lower excess noise and higher speed while maintaining optimal gain levels.
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Low noise avalanche photodiodes
LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242), 2002The maximum useful gain in avalanche photodiodes (APDs) is limited by the noise associated with the random fluctuations of the avalanche process which increase with multiplication. The conventional McIntyre theory relates this excess noise F, to the value of the mean multiplication, M and the ratio of the hole to electron ionization coefficients (/spl ...
J.P.R. David, G.J. Rees
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MWIR HgCdTe avalanche photodiodes
SPIE Proceedings, 2001This paper reports results obtained on mid-wave IR x equals 0.3 Hg1-xCdxTe avalanche photodiodes (APDs) that utilize a cylindrical 'p-around-n' front side illuminated n+/n-/p geometry. This 'p-around-n' geometry favors electron avalanche gain. These devices are characterized by a uniform, exponential, gain voltage characteristic that is consistent with
Jeffrey D. Beck +3 more
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Avalanche characteristics in thin GaN avalanche photodiodes
Japanese Journal of Applied Physics, 2019A Monte Carlo model using random ionization path lengths describing the carriers quantum transport in thin gallium nitride (GaN) avalanche photodiodes (APDs) for ultraviolet detection in industry is developed. This work simulated avalanche characteristics such as impact ionization coefficients, mean multiplication gain and excess noise factor of GaN ...
Cheang, Pei Ling +2 more
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HgCdTe electron avalanche photodiodes
Journal of Electronic Materials, 2004Exponential-gain values well in excess of 1,000 have been obtained in HgCdTe high-density, vertically integrated photodiode (HDVIP) avalanche photodiodes (APDs) with essentially zero excess noise. This phenomenon has been observed at temperatures in the range of 77–260 K for a variety of cutoff wavelengths in the mid-wavelength infrared (MWIR) band ...
M. A. Kinch +4 more
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Single Photon Avalanche Photodiodes
Optical Fiber Communication Conference and National Fiber Optic Engineers Conference, 2009• Performance of Geiger-mode APDs is improving rapidly ↓ • New application opportunities • Infrared SPADs - Acceptable detection efficiencies - Need lower dark count rates → higher operating temperature - Need solution for afterpulsing - Initial systems demonstrations and field ...
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