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Digital Alloy Avalanche Photodiodes
2019 IEEE Photonics Conference (IPC), 2019Recently, using Al x In 1-y As y Sb 1-y grown as a digital alloy we have demonstrated APDs with noise as low as Si at telecommunication wavelengths (1300 nm to 1550 nm). In this paper, we a noise suppression mechanism in digital alloys. This is related to the fundamental issue of transport in ordered materials and provides the potential for "designer ...
Joe C. Campbell, Seth Bank
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III-nitride avalanche photodiodes
SPIE Proceedings, 2009Wide bandgap III-Nitride semiconductors are a promising material system for the development of ultraviolet avalanche photodiodes (APDs) that could be a viable alternative to photomultiplier tubes. In this paper, we report the epitaxial growth and physical properties of device quality GaN layers on high quality AlN templates for the first ...
Ryan McClintock +6 more
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Solar-blind avalanche photodiodes
SPIE Proceedings, 2006There is a need for semiconductor based UV photodetectors to support avalanche gain in order to realize better performance and more effectively compete with existing photomultiplier tubes. However, there are numerous technical issues associated with the realization of high-quality solar-blind avalanche photodiodes (APDs).
Ryan McClintock +6 more
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Avalanche buildup time of silicon avalanche photodiodes
Applied Physics Letters, 1975The avalanche buildup time in silicon n+-p avalanche photodiodes is studied by a shot noise investigation. The avalanche buildup time t is given by t∼5×10−13M sec, where M is the multiplication factor.
T. Kaneda, H. Takanashi
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2010
This chapter contains sections titled: History Structure Characteristics Applications Related Devices This chapter contains sections titled: References ]]>
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This chapter contains sections titled: History Structure Characteristics Applications Related Devices This chapter contains sections titled: References ]]>
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InAs infrared avalanche photodiodes
1971 International Electron Devices Meeting, 1971InAs p-n junction photodiodes with high breakdown voltages and extremely low reverse-leakage currents up to the breakdown voltage have been developed. Because of the low current and high breakdown voltage, we have observed quantum efficiencies greater than unity in reverse-biased InAs photodiodes.
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Avalanche Photodiode Simulations
2014Process simulations of the avalanche photodiode structure are performed using the proposed processing parameters. Processing parameters are varied to find the optimal values. Breakdown voltage of the different parts of the structure is simulated in the device simulator and the maximum breakdown voltage is determined.
Knežević, Tihomir, Suligoj, Tomislav
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An optimized avalanche photodiode
IEEE Transactions on Electron Devices, 1967The feasibility of a fast, high-gain photodetector based on the phenomenon of avalanche multiplication in semiconductors has been investigated. Based on the process of carrier multiplication in a high electric field, criteria for the design of an optimized avalanche photodiode and for the choice of the best semiconductor material are developed.
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