Results 121 to 130 of about 962 (171)

New ultraviolet avalanche photodiodes (APDs) of organic (PEDOT: PSS)–inorganic (ZnSSe) hybrid structure

Physica Status Solidi C: Current Topics in Solid State Physics, 2012
AbstractWe have developed new organic (PEDOT:PSS)‐inorganic (ZnSSe) hybrid structure avalanche photodiodes (APDs). The device wafers are grown by MBE on n‐GaAs substrates, and PEDOT:PSS is formed by spin‐coating method on the semiconductor ZnSSe layers.
Tomoki Abe, Hirofumi Kasada
exaly   +2 more sources

Avalanche photodiode (APD) noise dependence on avalanche region width

1997 55th Annual Device Research Conference Digest, 2002
Conventional noise theory for APDs relates the avalanche noise to the ionization coefficients using McIntyre's[ 11 noise theory. For the lowest excess noise factor (F), the material should have widely disparate ionization coefficients and the carrier type with the larger ionization coefficients should be injected. Unfortunately most conventional 111-V'
K.F. Li, D.S. Ong, J.P.R. David, P.N. Robson, R.C. Tozer, G.J. Rees, R. Grey   +6 more
openaire   +1 more source

Wavelength dependence of avalanche photodiode (APD) parameters

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997
Abstract New types of Hamamatsu avalanche photodiodes (APD) have been investigated for the readout of PbWO4 crystals. The results presented cover quantum efficiency measurements of APD prototype A-E, which is passivated by a SiO2 layer or a Si3N4 layer, before and after exposure to a 5.5 Mrad dose of60Co photons.
Th. Kirn, D. Schmitz, J. Schwenke, Th. Flügel, D. Renker, H.P. Wirtz   +5 more
openaire   +1 more source

CMOS compatible avalanche photodiode (APD) arrays

SPIE Proceedings, 1994
The detection offaint light sources, such as distant planets in astronomy; the fluorescence of biological trace elements in biosensors; and the spectral emissions from spectroscopy experiments; ideally requires instrumentation that can log the arrival of single photons in a temporally and spatially resolved fashion. Until recently, the most widely used
Alan Mathewson, R. Duane, G. T. Wrixon
openaire   +1 more source

Lunar laser ranging using avalanche photodiode (APD) arrays

SPIE Proceedings, 2002
The Apache Point Observatory Lunar Laser-ranging Operation (APOLLO) will improve range measurements to the moon by at least an order-of-magnitude, with the goal of achieving millimeter precision. Lunar ranging provides the most stringent tests of Einstein's strong equivalence principle, as well as placing the tightest constraints on the time evolution
Jana D. Strasburg, Thomas W. Murphy, Jr., Christopher W. Stubbs, Eric G. Adelberger, D. W. Miller, J. I. Angle   +5 more
openaire   +1 more source

Measurements of photon dectection efficiency ofGeiger-mode avalanche photodiodes (G-APD)

Il Nuovo Cimento B, 2010
An estimation of the photon detection efficiency of multi-pixel Geiger-mode avalanche photodiodes based on measurements of their response to low-intensity light is presented. Properties of detectors manufactured by different producers are compared. A new fit method of the response spectra to light, taking into account after-pulse and cross-talk effects
GENTILE, Simonetta, E. Kuznetsova, MEDDI, Franco   +2 more
openaire   +1 more source

A 80V output voltage boost converter with low voltage ripple for Avalanche Photodiode(APD)

2011 IEEE International Symposium of Circuits and Systems (ISCAS), 2011
The Avalanche Photodiodes (APDs) are widely used in a variety of optical application requiring high sensitivity, such as long-distance optical communication and optical distance measurement, because the APDs can detect the low level light. APDs accompanied with the Transimpedance Amplifier (TIA) are utilized on the receiver side in the communication ...
Yao-Yi Yang, Chun-Yu Hsieh, Tzu-Chi Huang, Yu-Huei Lee, Shih-Wei Wang, Ming-Yan Fan, Ming-Jhe Du, Shih-Hsien Cheng, Ke-Horng Chen   +8 more
openaire   +1 more source

Design and Simulation Result of N Substrate Reverse Type Avalanche Photodiode (APD)

IEEE Transactions on Nuclear Science, 2009
We present results of design and simulation of the n-substrate reverse type avalanche photodiode (APD), which internally amplifies the photocurrent by an avalanche process, with the diffusion and the epitaxial methods. We aim to develop the APD which is coupled with scintillating materials for X-ray and delta-ray detections.
M. H. Mun, S. W. Jung, Heedong Kang, Dosung Kim, H. J. Kim, Sang Hoon Lee, H. Park   +6 more
openaire   +1 more source

InAs/InAsSb Avalanche Photodiode (APD) for applicaions in long-wavelength infrared region

Optoelectronics Letters, 2008
A generic numerical model of a long-wavelength Avalanche Photodiode (APD) based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoretical characterization of a proposed N+ InAS/P-InAsSb avalanche photodiode structure for possible application in 2–5 μm wavelength region.
P. K. Maurya, H. Agarwal, A. Singh, P. Chakrabarti   +3 more
openaire   +1 more source

The characterization of normal incidence Ge/Si avalanche photodiodes (APDs) at low temperatures

IEEE Winter Topicals 2011, 2011
A normal incidence Ge/Si avalanche photodiode (APD) with the separate-absorption-charge-multiplication structure is characterized when the temperature ranges from 78K to 330K. At low temperature (78K), the dark current is depressed significantly as expected, which helps to detect a weak optical signal (as low as 1nW).
Daoxin Dai, John E Bowers, Yimin Kang
openaire   +1 more source