Results 141 to 150 of about 962 (171)

Shallow-junction p+-n germanium avalanche photodiodes (APD’s)

Applied Physics Letters, 1979
Low-noise and high-quantum-efficiency germanium APD’s have been investigated by a p+-n structure. Boron implantation was used to form the p+ layer. Shallow p+-n junctions have a lower excess noise that n+-p junctions because holes have a higher ionization coefficient in germanium, and these p+-n diodes have a higher hole-to-electron collection ...
T. Kaneda, H. Fukuda, T. Mikawa, Y. Banba, Y. Toyama, H. Ando   +5 more
openaire   +1 more source

Current Bias Mode- An Innovative Scheme for Photon Counting Avalanche Photodiodes (APD) Array Operations

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 2007
We report an innovative scheme that use DC-current bias plus gated-voltage pulses to operate APDs. Such an operation can simplify the problem of breakdown-voltage nonuniformity in large-format APD arrays with excellent single photon detection efficiency.
Yonglin Gu, Fow-Sen Choa, Stewart Wu, Xiucheng Wu, Feng Yan, Peter Su, Michael A. Krainak   +6 more
openaire   +1 more source

Avalanche Photodiode (APD)-based PAM-16 4 Gb/s LED-POF Link

CLEO: 2014, 2014
The use of an APD-based receiver in a PAM-16 4 Gb/s LED-POF link is shown to provide 10 dB greater link power budget over a PIN photodiode link. Error-free transmission is achieved over 25m SI-POF.
Xin Li, Nikos Bamiedakis, Jinlong Wei, Richard V. Penty, Ian H. White   +4 more
openaire   +1 more source

Temperature measurements of separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's)

IEEE Photonics Technology Letters, 1993
Temperature-dependent measurements were per formed on planar separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APD's). The bandwidth versus gain dependence, gain, and breakdown voltage are strongly correlated with the temperature.
L.E. Tarof, J. Yu, T. Baird, R. Bruce, D.G. Knight   +4 more
openaire   +1 more source

In-orbit performance of avalanche photodiode as radiation detector onboard a pico-satellite Cute-1.7+APD II

SPIE Proceedings, 2010
Cute-1.7+APD II is the third pico-satellite developed by students at the Tokyo Institute of Technology. One of the primary goals of the mission is to validate the use of avalanche photodiodes (APDs) as a radiation detector for the first time in a space experiment.
T. Toizumi, Y. Yatsu, T. Nakamori, J. Kataoka, Y. Tsubuku, Y. Kuramoto, T. Enomoto, R. Usui, N. Kawai, K. Akiyama, S. Inagawa, H. Ashida, K. Omagari, N. Miyashita, S. Matsunaga, Y. Ishikawa, Y. Matsunaga, N. Kawabata   +17 more
openaire   +1 more source

Design and fabrication of a 10 Gb/s InGaAs/InP avalanche photodiode (APD) based on the non-local model

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004., 2005
A 10 Gb/s APD is designed and fabricated by using the non-local model. Multiplication layer thickness and 2-dimensional Zn-diffusion profiles are optimized. The gain and bandwidth product (GB) more than 80 GHz, spatially uniform gain distribution, and the dark current less than 1 nA are successfully obtained.
null Sungmin Hwang, null Jongin Shim, null Yungseon Eo, null Seungkee Yang, null Hwayong Kang, null Byoungok Jun, null Doyong Lee, null Donghoon Jang   +7 more
openaire   +1 more source

A neural network model for determination of the breakdown voltage for separate absorption and multiplication region avalanche photodiode (SAM-APD)

Second IFIP International Conference on Wireless and Optical Communications Networks, 2005. WOCN 2005., 2005
In this paper, using the multi layer perceptron (MLP) neural network, we determine the breakdown voltage for separate absorption and multiplication region avalanche photodiode (SAM-APD). Also, we analyze the sensitivity of breakdown voltage with different parameters. As examples, live devices are simulated with the model.
M. Soroosh, F. Gity, A.R. Sherafat, Kh. Farahani, M. Razaghi   +4 more
openaire   +1 more source

A Novel Equivalent Circuit Model for Separate Absorption Grading Charge Multiplication Avalanche Photodiode (APD)-Based Optical Receiver

Journal of Lightwave Technology, 2010
A novel equivalent circuit for separate absorption grading charge multiplication (SAGCM) APDs composed of basic circuit components is developed. The model is applied to simulate the frequency performance of APDs, and the simulating results show a well-reasonable agreement with the physical model calculation and experimental data. The influence of three
null Jiayin Wu, null Gang Wang
openaire   +1 more source

Photon detection efficiency done for Geiger-mode avalanche photodiodes (G-APD)

2010
Estimation of the Photon Detect Efficiency (PDE) of multi-pixel Geiger-mode avalanche photodiodes (G-APD) based on measurements of the G-APD response to low-intensity light is presented. The fit of the light-response spectra takes into account after-pulsing and cross-talk effects and yields the value of initial photons.
GENTILE, Simonetta, MEDDI, Franco, E. Kutznetsova   +2 more
openaire   +1 more source

Characterization of InGaAs/InAlAs Separate Absorption and Multiplication Layers (SAM) Avalanche Photodiodes (APD) for Geiger Mode Operation

2006
InGaAs/InAlAs SAM APDs are characterized with the purpose of using these devices as single photon avalanche diodes (SPAD). Typical gains for these devices in linear mode are shown to approach 40. Sidewall leakage, due to the exposed mesa structure of the device, is limited with the application of a dielectric, and shown to be insignificant.
Compton, Madison, Huntington, Andrew, Pejčinović, Branimir, Williams, George   +3 more
openaire   +2 more sources