Results 131 to 140 of about 962 (171)
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Fabrication of 64×64 InGaAs/InP avalanche photodiode (APD) focal plane arrays
Seventh Symposium on Novel Photoelectronic Detection Technology and Applications, 2021In this study, the fabrication of the 64×64 InGaAs/InP avalanche photodiode （APD）focal plane arrays for single photon detection in the near-infrared region (0.9~1.65 μm) was conducted. The APD is with a separate absorption, grading, charge, and multiplication (SAGCM) structure.
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High gain avalanche photodiode (APD) arrays in flow cytometer opitical system
2011 International Conference on Multimedia Technology, 2011The basic principles of flow cytometer are introduced, on the basis of diode pump solid state laser (532 nm) as a excitation source and a high gain avalanche photodiode (APD) arrays as a light detector, a verification opitical system is built. Then, Spherotech Rainbow Calibration Particle RCP-30-5A is used to evaluate the performance of the opitical ...
null Shutao Zhao +4 more
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Circuit modeling of separate absorption, charge and multiplication avalanche photodiode (SACM-APD)
6th International Conference on Laser and Fiber-Optical Networks Modeling, 2004. Proceedings of LFNM 2004., 2005We present a circuit model for separate absorption, charge and multiplication avalanche photodiode (SACM-APD). It is based on the carrier rate equations in the different regions of the device. Using the model we obtain the photocurrent, quantum efficiency, and dark current. As examples, GaAs and InGaAs/InAlAs SACM-APDs are simulated.
A. Zarifkar, M. Soroosh
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Temperature dependent characteristics of a PIN avalanche photodiode (APD) in Ge, Si and GaAs
Optical and Quantum Electronics, 1979A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs PIN avalanche photodiodes.
Y. K. Su, C. Y. Chang, T. S. Wu
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Measurements of the photon detection efficiency done for Geiger-mode avalanche photodiodes (G-APD)
Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications, 2010Estimation of the Photon Detect Efficiency (PDE) of multi-pixe l Geiger-mode avalanche photodiodes (G-APD) based on measurements of the G-APD response to low-intensity light is presented. The fit of the light-response spectra takes into account after-pulsing and cross-talk effects and yields the value of initial photons.
S. Gentile, F. Meddi, E. Kuznetsova
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Second IFIP International Conference on Wireless and Optical Communications Networks, 2005. WOCN 2005., 2005
In this paper, we present a circuit model of noise for separate absorption, and multiplication avalanche photodiode (SAM-APD). Also a circuit model of SAM-APD is presented. It is based on the carrier rate equations in different region of device. As two examples, a GaAs and an InGaAs/InAlAs SAM-APD are simulated.
M. Soroosh +2 more
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In this paper, we present a circuit model of noise for separate absorption, and multiplication avalanche photodiode (SAM-APD). Also a circuit model of SAM-APD is presented. It is based on the carrier rate equations in different region of device. As two examples, a GaAs and an InGaAs/InAlAs SAM-APD are simulated.
M. Soroosh +2 more
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Review of Scientific Instruments, 1995
Undesirable phase delay in avalanche photodiode (APD) between input light and output current is noticeable when modulation frequency of the incident light is over several hundreds of MHz. The degree of the delay increases with a decrease of the incident intensity.
Shuko Yokoyama +3 more
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Undesirable phase delay in avalanche photodiode (APD) between input light and output current is noticeable when modulation frequency of the incident light is over several hundreds of MHz. The degree of the delay increases with a decrease of the incident intensity.
Shuko Yokoyama +3 more
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2008 Conference on Lasers and Electro-Optics, 2008
Bandwidth limitations of SACM-APDs are investigated using an energy balance transport model. A methodology to improve device performance based on the analysis of internal device currents is presented.
Hektor T. J. Meier, Bernd Witzigmann
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Bandwidth limitations of SACM-APDs are investigated using an energy balance transport model. A methodology to improve device performance based on the analysis of internal device currents is presented.
Hektor T. J. Meier, Bernd Witzigmann
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2010
This chapter contains sections titled: History Structure Characteristics Applications Related Devices This chapter contains sections titled: References ]]>
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This chapter contains sections titled: History Structure Characteristics Applications Related Devices This chapter contains sections titled: References ]]>
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IEEE Nuclear Science Symposuim & Medical Imaging Conference, 2010
The aim of the present work is the characterization of the S8898–128–02 Avalanche PhotoDiode array (APDs) from Hamamatsu Photonics. This work includes the implementation of a readout system as well as electronic noise estimation in APDs under several conditions varying integration times and clock frequencies.
E Sanchis +7 more
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The aim of the present work is the characterization of the S8898–128–02 Avalanche PhotoDiode array (APDs) from Hamamatsu Photonics. This work includes the implementation of a readout system as well as electronic noise estimation in APDs under several conditions varying integration times and clock frequencies.
E Sanchis +7 more
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