Results 231 to 240 of about 127,795 (313)

Intrinsic Ohmic contact and electric-field tunable interface in a 2D NbS₂/As₂C₃ metal-semiconductor heterostructure. [PDF]

Nanoscale Adv
Sang NX, Cuong NQ, Long LP.
europepmc   +1 more source

Recent Advances in Decoupling Strategies for Soft Sensors

Advanced Science, EarlyView.
This review provides an overview of recent advances in decoupling strategies for soft sensors. It summarizes single‐modal sensors that are insensitive to stretching, bending, crosstalk, and other environmental interferences, and highlights emerging multimodal decoupling methods enabled by spatiotemporal information and machine learning.
Yangbo Yuan, Wanqing Zhang, Jia‐Yu Yang, Manqi Peng, Huanyu Cheng   +4 more
wiley   +1 more source

A Van Der Waals Broadband Infrared Optical Synapse Enabling Orientation Detection. [PDF]

Adv Sci (Weinh)
Guo D, Li W, Gu P, Dong W, Rui X, Watanabe K, Taniguchi T, Ye Y, Zheng F, Zhou J, Zheng S.   +10 more
europepmc   +1 more source

Engineering Compact Base Editors by AlphaFold‐Guided Mutation Scan and Escherichia coli‐Based Tri‐Selection

Advanced Science, EarlyView.
A miniaturized deaminase SsdAtox was scanned with AlphaFold to identify DNA binding pocket hot spots. Site‐saturation mutagenesis at gatekeeper residue K31 yielded ten‐fold activity enhancement. Trinity Screen, an E. coli‐based three‐in‐one platform selecting for high activity and reduced double‐strand breaks, enabled combinatorial evolution at DNA ...
Ryeo Gang Son, Goeun Kim, Jungjoon K. Lee   +2 more
wiley   +1 more source

Real-space observation of a time-reversal invariant topological state in twisted bilayer InSe. [PDF]

Nat Commun
Tian D, Tao S, Wang Y, Cheng P, Zhang Y, Wu K, Zhang Z, Yang SA, Feng B, Lu Y, Chen L.   +10 more
europepmc   +1 more source

Imperfection in Semiconductors Leading to High Performance Devices

Advanced Science, EarlyView.
Crystalline perfection is typically pursued in semiconductors to enhance device performance. However, through modeling and experimental work, we show that defects can be strategically employed in a specific detection regime to increase sensitivity to extreme values. GaN diodes are demonstrated to effectively detect high‐energy proton beams at fluxes as
Jean‐Yves Duboz, Matilde Siviero, Lucas Lesourd, Eric Frayssinet, Sebastien Chenot, Petter Hofverberg, Sullivan Marafico, Marie Vidal, Maxime Hugues   +8 more
wiley   +1 more source

Thermoelectric Optimization and Quantum-to-Classical Crossover in Gate-Controlled Two-Dimensional Semiconducting Nanojunctions. [PDF]

ACS Nano
Chen YC, Chang YC.
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Disentangle Intertwined Interactions in Correlated Charge Density Wave with Magnetic Impurities. [PDF]

ACS Nano
Park JW, Kim H, Yeom HW.
europepmc   +1 more source

Reconfigurable Magneto-Optoelectronic Devices for Multidimensional Optical Neural Network. [PDF]

Small Sci
He H, Cheng Y, Zhu W, Sun J, Sun J, Wang T, Song C, Pan F, Zhang J, Wang Y.   +9 more
europepmc   +1 more source