Results 241 to 250 of about 127,795 (313)

Competing quantum tunneling processes of heavy and light particles in isocyanic acid radical anions. [PDF]

Nat Commun
Tang J, Fan W, Wang L, Jiang X, Sun B, Zhou Y, Fang W, Zeng X, Zhou M.   +8 more
europepmc   +1 more source

Field manipulation of Weyl modes in an ideal Dirac semimetal. [PDF]

Nat Commun
Zhong J, Wang J, Yang M, Liu J, Ren Z, Huang A, Shi Z, Zhu Z, Shi Y, Hao W, Zhuang J, Du Y.   +11 more
europepmc   +1 more source

Preparation and Performance Exploration of MoS₂/WSe₂ Van Der Waals Heterojunction Tunneling Field-Effect Transistor. [PDF]

Micromachines (Basel)
Chong C, Liu H, Wang S, Chen S, Yan C.
europepmc   +1 more source

Bio-inspired cross-modal super-additive plasticity for seamless visual processing-in-sensory and -in-memory. [PDF]

Nat Commun
Xiong X, Fu T, Gu C, Li Q, Liu H, Wang X, Kang J, Liu S, Wang Y, Li D, Wang X, Pan A, Wu Y.   +12 more
europepmc   +1 more source

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Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

Physical Review Letters, 2004
A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential.
J, Appenzeller, Y-M, Lin, J, Knoch, Ph, Avouris   +3 more
openaire   +3 more sources

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

IEEE Transactions on Electron Devices, 2012
Germanium is a widely used material for tunnel FETs because of its small band gap and compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is considered. However, direct band-to-band tunneling (BTBT) in Ge should be included in tunnel FET modeling and simulations since the energy difference between the Ge conduction band ...
Kao, Kuo-Hsing, Verhulst, Anne S., Vandenberghe, William G., Sorée, Bart, Groeseneken, Guido, De Meyer, Kristin   +5 more
openaire   +3 more sources

Effect of Band-to-Band Tunneling on Junctionless Transistors

IEEE Transactions on Electron Devices, 2012
We evaluate the impact of band-to-band tunneling (BTBT) on the characteristics of n-channel junctionless transistors (JLTs). A JLT that has a heavily doped channel, which is fully depleted in the off state, results in a significant band overlap between the channel and drain regions.
GUNDAPANENI, S, BAJAJ, M, PANDEY, RK, MURALI, KVRM, GANGULY, S, KOTTANTHARAYIL, A   +5 more
openaire   +3 more sources

Atomic-Monolayer MoS₂Band-to-Band Tunneling Field-Effect Transistor

Small, 2016
The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2 , results in the direct manifestation of a band-to-band ...
Lan, Yann Wen, Torres, Carlos M., Tsai, Shin Hung, Zhu, Xiaodan, Shi, Yumeng, Li, Ming-yang, Li, Lain-Jong, Yeh, Wen Kuan, Wang, Kang L.   +8 more
openaire   +4 more sources

Insight into Lateral Band-to-Band-Tunneling in Nanowire Junctionless FETs

IEEE Transactions on Electron Devices, 2016
In this paper, we investigate the nature of lateral band-to-band-tunneling (L-BTBT) component of gate-induced drain leakage (GIDL) in different nanowire junctionless FET (NWJLFET) configurations for the first time. Although the NW junctionless accumulation mode (JAM) FET has a larger ON-state current compared with the NWJLFETs, we demonstrate that the ...
Shubham Sahay, Mamidala Jagadesh Kumar
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A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling

Journal of Applied Physics, 2013
To enable circuit design using tunnel field-effect transistors (TFETs), a physics-based model based on nonlocal band-to-band tunneling is developed. To maintain accuracy, the tunneling lengths are estimated assuming that both vertical and horizontal tunneling paths exist in the device.
K. Fukuda, T. Mori, W. Mizubayashi, Y. Morita, A. Tanabe, M. Masahara, T. Yasuda, S. Migita, H. Ota   +8 more
openaire   +2 more sources