Results 21 to 30 of about 187,986 (268)

The design and optimization of novel elliptic cylindrical through‐silicon via and its temperature characterization

open access: yesEngineering Reports, 2022
Through‐silicon via (TSV) technology is a key technology to realize multi‐layer chips and its structure model and transmission characteristics have attracted much attention.
Wenbo Guan   +3 more
doaj   +1 more source

Lithographic band gap tuning in photonic band gap crystals

open access: yesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry etching, we have shifted the conduction band of crystals within the near-infrared.
Cheng, C. C.   +3 more
openaire   +2 more sources

FEM thermal analysis of Cu/diamond/Cu and diamond/SiC heat spreaders

open access: yesAIP Advances, 2017
The effects of thermal stress resulting from thermal cooling in copper/diamond/copper heat spreader is investigated using finite element method. A similar model of diamond/SiC heat spreader is compared without addition of interlayer.
Garuma Abdisa Denu   +4 more
doaj   +1 more source

Ge pMOSFETs with GeO x Passivation Formed by Ozone and Plasma Post Oxidation

open access: yesNanoscale Research Letters, 2019
A comparison study on electrical performance of Ge pMOSFETs with a GeO x passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al2O3/n-Ge (001) substrate followed by a 5-nm
Yang Xu   +6 more
doaj   +1 more source

Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators

open access: yesAIP Advances, 2017
The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied.
Garuma Abdisa Denu   +4 more
doaj   +1 more source

Metallic photonic band-gap materials [PDF]

open access: yesPhysical Review B, 1995
We calculate the transmission and absorption of electromagnetic waves propagating in two-dimensional (2D) and 3D periodic metallic photonic band-gap (PBG) structures. For 2D systems, there is substantial difference between the {ital s}- and {ital p}-polarized waves. The {ital p}-polarized waves exhibit behavior similar to the dielectric PBG`s. But, the
Sigalas, Michael M.   +3 more
openaire   +3 more sources

Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs

open access: yesNanoscale Research Letters, 2021
In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga2O3 MOSFETs with native or high-thermal-conductivity substrates.
Xiaole Jia   +4 more
doaj   +1 more source

Photonic-Band-Gap Resonator Gyrotron [PDF]

open access: yesPhysical Review Letters, 2001
We report the design and experimental demonstration of a gyrotron oscillator using a photonic-band-gap (PBG) structure to eliminate mode competition in a highly overmoded resonator. The PBG cavity supports a TE(041)-like mode at 140 GHz and is designed to have no competing modes over a minimum frequency range delta omega/omega of 30% about the design ...
J R, Sirigiri   +5 more
openaire   +2 more sources

Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances

open access: yesNanoscale Research Letters, 2019
We demonstrate the negative capacitance (NC) effect of HfZrOx-based field-effect transistors (FETs) in the experiments. Improved I DS, SS, and G m of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET.
Jing Li   +4 more
doaj   +1 more source

H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric

open access: yesAIP Advances, 2021
The performance of hydrogen-terminated diamond MOSFETs with a large gate–drain interspace (LGD) was analyzed on a polycrystalline diamond sample. A 300 °C atomic layer deposition grown (ALD-grown) HfO2 dielectric (28 nm) was used the gate dielectric and ...
Zeyang Ren   +10 more
doaj   +1 more source

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