Results 21 to 30 of about 187,986 (268)
Through‐silicon via (TSV) technology is a key technology to realize multi‐layer chips and its structure model and transmission characteristics have attracted much attention.
Wenbo Guan +3 more
doaj +1 more source
Lithographic band gap tuning in photonic band gap crystals
We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry etching, we have shifted the conduction band of crystals within the near-infrared.
Cheng, C. C. +3 more
openaire +2 more sources
FEM thermal analysis of Cu/diamond/Cu and diamond/SiC heat spreaders
The effects of thermal stress resulting from thermal cooling in copper/diamond/copper heat spreader is investigated using finite element method. A similar model of diamond/SiC heat spreader is compared without addition of interlayer.
Garuma Abdisa Denu +4 more
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Ge pMOSFETs with GeO x Passivation Formed by Ozone and Plasma Post Oxidation
A comparison study on electrical performance of Ge pMOSFETs with a GeO x passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al2O3/n-Ge (001) substrate followed by a 5-nm
Yang Xu +6 more
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Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators
The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied.
Garuma Abdisa Denu +4 more
doaj +1 more source
Metallic photonic band-gap materials [PDF]
We calculate the transmission and absorption of electromagnetic waves propagating in two-dimensional (2D) and 3D periodic metallic photonic band-gap (PBG) structures. For 2D systems, there is substantial difference between the {ital s}- and {ital p}-polarized waves. The {ital p}-polarized waves exhibit behavior similar to the dielectric PBG`s. But, the
Sigalas, Michael M. +3 more
openaire +3 more sources
Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs
In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga2O3 MOSFETs with native or high-thermal-conductivity substrates.
Xiaole Jia +4 more
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Photonic-Band-Gap Resonator Gyrotron [PDF]
We report the design and experimental demonstration of a gyrotron oscillator using a photonic-band-gap (PBG) structure to eliminate mode competition in a highly overmoded resonator. The PBG cavity supports a TE(041)-like mode at 140 GHz and is designed to have no competing modes over a minimum frequency range delta omega/omega of 30% about the design ...
J R, Sirigiri +5 more
openaire +2 more sources
Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
We demonstrate the negative capacitance (NC) effect of HfZrOx-based field-effect transistors (FETs) in the experiments. Improved I DS, SS, and G m of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET.
Jing Li +4 more
doaj +1 more source
The performance of hydrogen-terminated diamond MOSFETs with a large gate–drain interspace (LGD) was analyzed on a polycrystalline diamond sample. A 300 °C atomic layer deposition grown (ALD-grown) HfO2 dielectric (28 nm) was used the gate dielectric and ...
Zeyang Ren +10 more
doaj +1 more source

