Results 31 to 40 of about 4,726,512 (396)
Tunable Band Structures of Polycrystalline Graphene by External and Mismatch Strains [PDF]
, 2012 Lacking a band gap largely limits the application of graphene in electronic devices. Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene.
Shi, Xinghua, Wei, Yujie, Wu, Jiangtao
core +1 more source
Ge pMOSFETs with GeO x Passivation Formed by Ozone and Plasma Post Oxidation
Nanoscale Research Letters, 2019 A comparison study on electrical performance of Ge pMOSFETs with a GeO x passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al2O3/n-Ge (001) substrate followed by a 5-nm
Yang Xu +6 more
doaj +1 more source
Engineering Reports, 2022 Through‐silicon via (TSV) technology is a key technology to realize multi‐layer chips and its structure model and transmission characteristics have attracted much attention.
Wenbo Guan +3 more
doaj +1 more source
FEM thermal analysis of Cu/diamond/Cu and diamond/SiC heat spreaders
AIP Advances, 2017 The effects of thermal stress resulting from thermal cooling in copper/diamond/copper heat spreader is investigated using finite element method. A similar model of diamond/SiC heat spreader is compared without addition of interlayer.
Garuma Abdisa Denu +4 more
doaj +1 more source
Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators
AIP Advances, 2017 The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied.
Garuma Abdisa Denu +4 more
doaj +1 more source
Direct band-gap crossover in epitaxial monolayer boron nitride
Nature Communications, 2019 Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides.
C. Elias +11 more
semanticscholar +1 more source
Metallic photonic band-gap materials [PDF]
Physical Review B, 1995 We calculate the transmission and absorption of electromagnetic waves propagating in two-dimensional (2D) and 3D periodic metallic photonic band-gap (PBG) structures. For 2D systems, there is substantial difference between the {ital s}- and {ital p}-polarized waves. The {ital p}-polarized waves exhibit behavior similar to the dielectric PBG`s. But, the
Sigalas, Michael M. +3 more
openaire +3 more sources
Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs
Nanoscale Research Letters, 2021 In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga2O3 MOSFETs with native or high-thermal-conductivity substrates.
Xiaole Jia +4 more
doaj +1 more source
Photonic-Band-Gap Resonator Gyrotron [PDF]
Physical Review Letters, 2001 We report the design and experimental demonstration of a gyrotron oscillator using a photonic-band-gap (PBG) structure to eliminate mode competition in a highly overmoded resonator. The PBG cavity supports a TE(041)-like mode at 140 GHz and is designed to have no competing modes over a minimum frequency range delta omega/omega of 30% about the design ...
J R, Sirigiri +5 more
openaire +2 more sources
Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
Nanoscale Research Letters, 2019 We demonstrate the negative capacitance (NC) effect of HfZrOx-based field-effect transistors (FETs) in the experiments. Improved I DS, SS, and G m of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET.
Jing Li +4 more
doaj +1 more source