Results 101 to 110 of about 2,433,276 (338)
Band offsets, defects, and dipole layers in semiconductor heterojunctions [PDF]
The role of defects in heterojunctions was investigated. The density of such defects required to pin the Fermi level or to affect the band offset was estimated using simple electrostatic considerations.
Zur, A., McGill, T. C.
core
First-principles calculations of band offsets of Al xGa 1-xP-GaP(001) heterostructures
A first-principles pseudopotential method combined with the virtual-crystal approximation (VCA) is used to calculate band offsets of Al xGa 1-xP-GaP(001) heterostructures.
Zhang, X.H. +7 more
core +1 more source
For electronic devices based on two-dimensional semiconductors (2DSs), few-layer transition-metal dichalcogenides offer enhanced electrical performance over their monolayer counterparts.
Xiao-Lin Zhao +6 more
doaj +1 more source
Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction. [PDF]
Yu T +12 more
europepmc +1 more source
Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics
The development of cuprous oxide (Cu2O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu2O and its n-type heterojunction partner or electron-
R. Brandt +8 more
semanticscholar +1 more source
ABSTRACT Objective In multiple sclerosis, the optimal time for deploying a therapeutic intervention is before the central nervous system is damaged; given the success of trials treating the earliest stage of MS, the radiologically isolated syndrome, developing primary prevention strategies is an important next challenge.
Amy W. Laitinen +7 more
wiley +1 more source
Valence-band offsets of III-V alloy heterojunctions
Valence band offsets at the heterointerface of lattice-matched ahoy semiconductors are investigated with theoretical calculation, which is based on average bond energy theory in conjunction with a cluster expansion method.
蔡淑惠 +5 more
core
BAND OFFSETS IN STRAINED INGAASP/INGAASP QUANTUM-WELL OPTICAL MODULATOR STRUCTURES
Magneto-absorption experiments on a range on In1-xGaxAsyP1-y/InGaAsP multi-quantum well (MQW) structures, including both tensile and compressive strained wells, are presented.
MARTIN, R +13 more
core +1 more source
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
The incorporation of In2O3 into Ga2O3 allows for tailoring of the bandgap over a wide range in (InxGa1−x)2O3, and this material is emerging as a candidate in transparent electrodes on optoelectronic devices, heterostructure transistors, photodetectors ...
Chaker Fares +7 more
doaj +1 more source
Lead-free, formamidinium germanium-antimony halide (FA4GeSbCl12) double perovskite solar cells: the effects of band offsets. [PDF]
Sekar K +5 more
europepmc +1 more source

