Results 41 to 50 of about 3,360,387 (243)

Calculation of barrier potential height using fraction parameter

open access: yesResults in Physics, 2022
Nucleus deformation refers to a change in the nucleus surface shape. The expression of the radius of the nucleus can represent this deformation. Generally, these radii are expansions involving spherical harmonics.
Rizal Kurniadi   +2 more
doaj   +1 more source

Spin polarization control through resonant states in an Fe/GaAs Schottky barrier [PDF]

open access: yes, 2008
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons ...
A. Hirohata   +9 more
core   +2 more sources

Direct Extraction of Fowler–Nordheim Tunneling Parameters of Asymmetric Metal-Insulator-Metal Diodes Based on Current-Voltage Measurement

open access: yesIEEE Journal of the Electron Devices Society
A method directly solving Fowler-Nordheim tunneling current equations for extracting the effective tunneling area, the barrier heights of the top and bottom electrodes and the electron tunneling effective mass in metal-insulator-metal diodes is ...
Wallace Lin, Darsen D. Lu
doaj   +1 more source

Composite fermions traversing a potential barrier

open access: yes, 1995
Using a composite fermion picture, we study the lateral transport between two two-dimensional electron gases, at filling factor 1/2, separated by a potential barrier.
A. Matulis   +16 more
core   +1 more source

Comparison of the barrier height measurements by the Powell method with the φMS measurement results

open access: yesJournal of Telecommunications and Information Technology, 2005
In this work, we have compared the barrier height measurements carried out using the Powell method with the photoelectric effective contact potential difference (φMS) measurement results. The photoelectric measurements were performed on the samples that
Krzysztof Piskorski
doaj   +1 more source

Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K

open access: yesIEEE Journal of the Electron Devices Society, 2020
In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm2.
M. Malakoutian   +4 more
doaj   +1 more source

Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN [PDF]

open access: yes, 2011
We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements.
Nanda, Kumar Reddy N.   +1 more
core  

Periodic Quantum Tunneling and Parametric Resonance with Cigar-Shaped Bose-Einstein Condensates

open access: yes, 2002
We study the tunneling properties of a cigar-shaped Bose-Einstein condensate by using an effective 1D nonpolynomial nonlinear Schr\"odinger equation (NPSE).
A Parola   +11 more
core   +1 more source

Surface Reactivity of Carbonaceous Nanoparticles: The Importance of Surface Pocket

open access: yesFrontiers in Mechanical Engineering, 2021
The surface reactivity of carbonaceous nanoparticles is revealed from the barrier height and reaction enthalpy of hydrogen abstraction reaction by H radicals computed at the M06-2X/6–311g(d,p)//B3LYP/6-311G(d,p) level of theory. Small polycyclic aromatic
Hongyu Wang, Xiaoya Chang, Dongping Chen
doaj   +1 more source

Investigation of significantly high barrier height in Cu/GaN Schottky diode

open access: yes, 2016
Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg   +4 more
semanticscholar   +1 more source

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