Results 61 to 70 of about 3,360,387 (243)

The systematic study of the influence of neutron excess on the fusion cross sections using different proximity-type potentials

open access: yes, 2012
Using different types of proximity potentials, we have examined the trend of variations of barrier characteristics (barrier height and its position) as well as fusion cross sections for 50 isotopic systems including various collisions of C, O, Mg, Si, S,
A. Winther   +50 more
core   +1 more source

Performance analysis of nanostructured Peltier coolers

open access: yes, 2018
Employing non-equilibrium quantum transport models, we investigate the details and operating conditions of nano-structured Peltier coolers embedded with an energy filtering barrier.
Muralidharan, Bhaskaran, Singha, Aniket
core   +1 more source

Electrical characteristics of Al contact to NiSi using thin W layer as a barrier [PDF]

open access: yes, 1981
We show that the thermal instability that is observed in Schottky diodes with an Al film on NiSi contact to can be removed by introducing a very thin (~250 Å) tungsten film between the Al and the NiSi layers.
Bartur, M., Nicolet, M-A.
core   +1 more source

Influence of magnetic viscosity on domain wall dynamics under spin-polarized currents

open access: yes, 2009
We present a theoretical study of the influence of magnetic viscosity on current-driven domain wall dynamics. In particular we examine how domain wall depinning transitions, driven by thermal activation, are influenced by the adiabatic and nonadiabatic ...
C. Burrowes   +3 more
core   +1 more source

Reducing the Barrier Height in Organic Transistors

open access: yesAdvanced Electronic Materials
Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors.
Arash Ghobadi   +7 more
doaj   +1 more source

Compositional dependence of Schottky barrier heights for Au on chemically etched In_(x)Ga_(1-x)P surfaces [PDF]

open access: yes, 1980
Measurements of the Au Schottky barrier height were carried out on thin films of n‐In_(x)Ga_(1−x)P, of various compositions epitaxially grown on n‐GaAs substrates. Conventional C–V, I–V, and photo response techniques were used. The junction was formed by
Kuech, T. F., McGaldin, J. O.
core  

Energy shift and conduction-to-valence band transition mediated by a time dependent potential barrier in graphene

open access: yes, 2015
We investigate the scattering of a wave packet describing low-energy electrons in graphene by a time-dependent finite step potential barrier. Our results demonstrate that, after Klein tunneling through the barrier, the electron acquires an extra energy ...
Chaves, Andrey   +4 more
core   +1 more source

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

open access: yesEnergies, 2019
This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to ...
Monia Spera   +7 more
doaj   +1 more source

Height of the Potential Barrier in Barrier Layer Cells [PDF]

open access: yesNature, 1953
Measurements of the zero resistance of a number of barrier-layer cells1 over a wide range of temperatures have shown that the theoretical expression: where A and ϕ are regarded as constants, is not obeyed over the whole range of temperatures.
openaire   +1 more source

The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

open access: yesNanoscale Research Letters, 2020
In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K.
Tao Zhang   +16 more
doaj   +1 more source

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