Results 131 to 140 of about 1,814 (188)

GHz acousto-optic angular momentum with tunable topological charge. [PDF]

Nat Commun
Pitanti A, Ashurbekov N, dePedro-Embid I, Msall M, Santos PV.   +4 more
europepmc   +1 more source

Thermoelastic damping losses in BAW resonators

, 2018
openaire   +1 more source

Design and Fabrication of 3.5 GHz Band-Pass Film Bulk Acoustic Resonator Filter. [PDF]

Micromachines (Basel)
Zhou Y, Zheng Y, Xu Q, Qu Y, Ren Y, Huang X, Gao C, Liu Y, Guo S, Cai Y, Sun C.   +10 more
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

X-band epi-BAW resonators

Journal of Applied Physics, 2022
Using epitaxial aluminum nitride (AlN) developed for ultraviolet photonics and high-speed electronics, we demonstrate suspended AlN thin-film bulk acoustic resonators (FBARs) at 9.2 GHz in the X-band (8–12 GHz) of the microwave spectrum. The resonators show a Qmax≈614 and a figure of merit f⋅Q≈5.6 THz.
Wenwen Zhao, Mohammad Javad Asadi, Lei Li, Reet Chaudhuri, Kazuki Nomoto, Huili Grace Xing, James C. M. Hwang, Debdeep Jena   +7 more
openaire   +1 more source

Piezotransduced single-crystal silicon BAW resonators

2022
We report on the design, fabrication and measurement of 13-MHz piezoelectrically actuated single-crystal silicon beam resonators operating in the first length-extensional mode. The transduction mechanism is based on an aluminum nitride layer grown on top of the resonator beam.
Alastalo A., Nurmela A., Dekker J., Mattila T., Pensala T.   +4 more
  +4 more sources

ZnO/AlN stacked BAW resonators with double resonance

2014 IEEE International Ultrasonics Symposium, 2014
We have fabricated BAW resonators with a piezoelectric bilayer that combines ZnO and AlN films. These stacked devices show two resonances that could be used to simultaneously track temperature variations and another parameter, such as loaded mass or pressure.
M Demiguel-Ramos, M Clement, J Goicuría, J Olivares, T Mirea, E Iborra, G Rughoobur, A J Flewitt, W I Milne   +8 more
openaire   +1 more source

BAW resonators reliability in the GHz range

IECON 2006 - 32nd Annual Conference on IEEE Industrial Electronics, 2006
Bulk Acoustic Wave (BAW) resonators are very promising candidates for Giga Hertz applications. In this context it becomes really important to analyse the behavior of these structures under harsh environmental conditions and severe operating conditions.
Ivira, B., Fillit, R.Y., Benech, Ph., Ndagijimana, F., Parat, G., Ancey, P.   +5 more
openaire   +2 more sources

Piezoelectrically actuated micromechanical BAW resonators

2008 IEEE Ultrasonics Symposium, 2008
We report on piezoelectrically actuated 13 MHz silicon beam resonators operating in the fundamental length extensional BAW mode. The resonance is evoked using an aluminum nitride layer grown on top of the resonator. We demonstrate quality factors as high as Q~55000 in vacuum, and transduction factors of the order of eta~20 muN=V.
Rosenberg, P., Jaakkola, A., Dekker, J., Nurmela, A., Pensala, A., Asmala, S., Riekkinen, T., Mattila, T., Alastalo, A.   +9 more
openaire   +1 more source