Results 151 to 160 of about 1,814 (188)

Numerical analysis of thin film BAW resonators

IEEE Symposium on Ultrasonics, 2003, 2004
Thin film bulk acoustic wave (TBAW) resonators are of increasing interest for a wide variety of system applications. These resonators are used as stand alone frequency control devices in oscillators or are incorporated into electrically or acoustically coupled filters.
K.M. Lakin, K.G. Lakin
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Surface micromachined BAW resonators based on AlN

2002 IEEE Ultrasonics Symposium, 2002. Proceedings., 2003
This contribution deals with surface micromachined BAW resonators based on AlN thin films. Process, design issues and first results are presented and discussed. Devices with two resonators in series having a resonance frequency between 7 and 8 GHz show promising results.
R. Lanz, P. Carazzetti, P. Muralt
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BAW resonator design considerations - An overview

2008 IEEE International Frequency Control Symposium, 2008
Bulk-Acoustic-Wave (BAW) filters are on their way to replace conventional RF-filters in major wireless communication standards such as PCS, WCDMA, WiFi, or WiMAX. The main advantage is a performance which is unmatched by SAW filters or ceramic filters, while maintaining low manufacturing costs.
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Compact parametric model of capacitive BAW resonators

2011 Joint Conference of the IEEE International Frequency Control and the European Frequency and Time Forum (FCS) Proceedings, 2011
This paper presents a new equivalent-circuit model of SiBARs, derived in a mathematically rigorous way from the physics equations governing the behavior of the device. The model is parametric, that is, the model component values can be computed directly from the dimensions of the resonator and the properties of the material.
Giorgio Casinovi, Ashwin K. Samarao, Farrokh Ayazi   +2 more
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Acoustic meta-materials in MEMS BAW resonators

Applied Physics A, 2011
This paper presents a meta-material-based design method for bulk acoustic wave (BAW) resonators with enhanced characteristics compared to those obtained with the typical bulk material implementation. We demonstrate the novel use of empty inclusions (i.e., ‘holes’) in bulk materials for engineering their acoustic (mechanical) properties (e.g.
X. Rottenberg, R. Jansen, C. Hoof, H. A. C. Tilmans   +3 more
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BAW Piezoelectric Resonators

2017
This chapter describes basic properties and modeling of resonators using acoustic waves propagating in a solid body. This type of waves is called the bulk acoustic wave (BAW), which can be excited and detected efficiently using piezoelectricity. The resonators are widely used in various applications such as clock generation, frequency filtering, and ...
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Piezoelectric materials for BAW resonators and filters

2001 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.01CH37263), 2002
Thin film bulk acoustic wave (BAW) resonators and filters are appropriate for mobile communication systems operating at high frequencies between 0.5 and 10 GHz. c-axis orientated AlN films are used for medium bandwidth applications. Electromechanical coupling factors k/sub t/ of 0.25/spl plusmn/0.03, which are close to the bulk data, have been found in
H.P. Lobl, M. Klee, C. Metzmacher, W. Brand, R. Milsom, P. Lok, F. van Straten   +6 more
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Finite element simulations of thin-film composite BAW resonators

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2001
A finite element method (FEM) formulation is presented for the numerical solution of the electroelastic equations that govern the linear forced vibrations of piezoelectric media. A harmonic time dependence is assumed. Both of the approaches, that of solving the field problem (harmonic analysis) and that of solving the corresponding eigenvalue problem ...
T, Makkonen, A, Holappa, J, Ellä, M M, Salomaa   +3 more
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Spurious resonance suppression in ZnO based thin-film baw resonators: FEM modeling and experiment

IEEE Ultrasonics Symposium, 2005., 2006
Spurious resonance suppression in ZnO based thin film BAW resonators by the boundary ring method of is studied. Electrical responses of resonators with varying width of the boundary ring structure are measured. Very clean resonator response is reached with optimum dimensions.
Ylilammi, Markku, Makkonen, Tapani, Pensala, Tuomas   +3 more
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Nonlinear artificial line models for power BAW resonators

IEEE Africon '11, 2011
The linear artificial transmission line model developed in 1986 by Morris and Hutchens is extended for nonlinear piezoelectric materials. Two new physical circuit models are proposed, one of them taking into account a mechanical nonlinearity while the other considers an electrical nonlinearity.
F. Constantinescu, A. G. Gheorghe, M. Nitescu, A. Florea   +3 more
openaire   +1 more source