Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation [PDF]
Scientific Reports, 2022 4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar ...
Masashi Kato +4 more
doaj +4 more sources
Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs [PDF]
AIP Advances, 2022 We investigated the nucleation sites of expanded single Shockley-type stacking faults (1SSFs) in a silicon carbide (SiC) metal–oxide–semiconductor field effect transistor (MOSFET) and demonstrated epitaxial layers designed for bipolar-degradation-free ...
Kumiko Konishi +7 more
doaj +2 more sources
An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network [PDF]
Micromachines, 2023 In this paper, an aging small-signal model for degradation prediction of microwave heterojunction bipolar transistor (HBT) S-parameters based on prior knowledge neural networks (PKNNs) is explored.
Lin Cheng +8 more
doaj +2 more sources
A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics [PDF]
MicromachinesA Si/SiC heterojunction double-trench MOSFET with improved conduction characteristics is proposed. By replacing the N+ source and P-ch regions with silicon, the device forms a Si/SiC heterojunction that exhibits Schottky-like characteristics, effectively
Yi Kang +5 more
doaj +2 more sources
A direct bonding copper degradation monitoring method for insulated gate bipolar transistor modules: Boundary‐dependent thermal network combined with feedback control [PDF]
High Voltage, 2023 The direct bonding copper (DBC) substrates of insulated gate bipolar transistor (IGBT) modules degrade inevitably under cycling thermo‐mechanical stress, causing potential threat to the reliability of IGBT modules. However, little attention has been paid
Xiaotong Zhang +4 more
doaj +2 more sources
Thermal Cycling Induced Degradation of Graphite Bipolar Plates: Mechanisms and Experimental Analysis [PDF]
EnergiesBipolar plates are critical components in high-efficiency energy conversion devices such as electrolyzers, fuel cells, and flow batteries, and their durability directly affects the overall performance and lifespan of the system. Although graphite bipolar
Daokuan Jiao +4 more
doaj +2 more sources
A Review on the Long-Term Performance of Proton Exchange Membrane Fuel Cells: From Degradation Modeling to the Effects of Bipolar Plates, Sealings, and Contaminants [PDF]
Energies, 2022 Proton-exchange membrane fuel cells (PEMFCs) are regarded as promising alternatives to internal combustion engines (ICEs) to reduce pollution. Recent research on PEMFCs focuses on achieving higher power densities, reducing the refueling time, mitigating ...
Hossein Pourrahmani +6 more
doaj +2 more sources
SPICE Model for SiC Bipolar Transistor and TTL Inverter Degradation Due to Gamma Radiation [PDF]
MicromachinesSilicon carbide (SiC) is a key material for electronics operating in harsh environments due to its wide bandgap, high thermal conductivity, and radiation hardness.
Alex Metreveli +2 more
doaj +2 more sources
Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics [PDF]
NanomaterialsIn this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode
Peiran Wang +10 more
doaj +2 more sources
Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC
Power Electronic Devices and ComponentsIt is now 25 years since the first observation of recombination-enhanced dislocation glide (REDG) in SiC p-i-n diodes. Since then, great progress has been made in understanding the mechanism behind up to a point where models emerged that can predict the ...
Jens Peter Konrath
doaj +2 more sources