Results 201 to 210 of about 27,330 (257)

Electroanalysis of Biochemistry and Material Chemistry-2nd Edition. [PDF]

Molecules
Wang G.
europepmc   +1 more source

Real-World Evaluation of Sequential Monopolar-Bipolar RF Device for Rejuvenation. [PDF]

J Cosmet Dermatol
Veltri N, Frank M, Richter M, Banionis S, Bifulco J, Kumar N.   +5 more
europepmc   +1 more source

Bipolar Breakthrough: A Greener Path to Deuterated Chemicals. [PDF]

Chem Bio Eng
He K, Wang H.
europepmc   +1 more source

Low 5HT_1B and 5HT₄ Receptor Neurotransmission as a Potential Link Between Cholesterol Metabolism and Suicide Risk. [PDF]

J Neurochem
Kalkman HO, Smigielski L.
europepmc   +1 more source

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The Impact of Annealing on the Following Radiation Degradation Rate of Bipolar Devices

2017 IEEE Radiation Effects Data Workshop (REDW), 2017
The effect of post irradiation annealing on the following radiation degradation rate of bipolar integrated circuit parameters was estimated. The degradation rate increases significantly during the irradiation in comparison with the irradiation before the annealing.
Viacheslav S Pershenkov, Alexander S Rodin   +1 more
exaly   +2 more sources

Degradation of gain in bipolar transistors

IEEE Transactions on Electron Devices, 1994
In this paper hot carrier related aging of n-p-n bipolar transistors is investigated experimentally and theoretically in order to bring physical insight into the bipolar h/sub FE/ (common emitter current gain) degradation. Electrical stress experiments are performed on transistors with different base doping profiles at varying temperatures.
I.C. Kizilyalli, J.D. Bude
openaire   +1 more source

Anomalous Current Gain Degradation in Bipolar Transistors

29th International Reliability Physics Symposium, 1991
The current gain of a bipolar transistor, h/sub FE/, is degraded by the emitter-base reverse-bias stress. The mechanism has been interpreted to be due to an increase in the interface state density, while its dependence on stress time has been found to be proportional to t/sup n/, where n is 0.5 to 1.
Y. Nitsu, K. Yamaura, H. Momose, K. Maeguchi   +3 more
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Bipolar Degradation in 4H-SiC Thyristors

Materials Science Forum, 2012
Bipolar degradation in 4H-SiC thyristors subjected to high current density stress is reported. The thyristor device structure, its fabrication process as well as testing conditions are described. The Electron Beam Induced Current (EBIC) technique was used for defect analysis in testing of both degraded and non-degraded devices.
Stanislav I. Soloviev, Peter A. Losee, Stephen Arthur, Zachary Stum, Jerome L. Garrett, Ahmed Elasser   +5 more
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Degradation of hexagonal silicon-carbide-based bipolar devices

Journal of Applied Physics, 2006
Only a few years ago, an account of degradation of silicon carbide high-voltage p-i-n diodes was presented at the European Conference on Silicon Carbide and Related Compounds (Kloster Banz, Germany, 2000). This report was followed by the intense effort of multiple groups utilizing varied approaches and subsequent progress in both fundamental ...
M. Skowronski, S. Ha
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The temperature dependence of mixed mode degradation in bipolar transistors

Microelectronics Reliability, 2012
Abstract The temperature dependence of mixed mode degradation is investigated. It is shown that a standard measure–stress–measure procedure can yield large errors in the extracted activation energy of this degradation mechanism. A new and efficient measurement procedure is presented that allows for an accurate extraction of the temperature dependence.
Guido T. Sasse, Martin Combrié
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