Results 221 to 230 of about 27,208 (258)

Degradation of Disperse Red 167 Azo Dye by Bipolar Electrocoagulation

Separation Science and Technology, 2012
This study investigates the influence of variables on the removal efficiency of solution containing azo dye Disperse Red 167 by bipolar electrocoagulation (BEC). Current density, time of electrolysis, interelectrode distance, supporting electrolyte concentration, and total surface area were the variables that mostly influenced the azo dye removal.
W. Lemlikchi, S. Khaldi, M. O. Mecherri, H. Lounici, N. Drouiche   +4 more
openaire   +1 more source

Unipolar and bipolar degradation of low voltage Metal Oxide Varistors

2016 IEEE Power and Energy Society General Meeting (PESGM), 2016
Metal Oxide Varistors (MOVs) are widely used in power distribution networks and electric loads and appliances in order to protect against lightning surges and transients overvoltages. Degradation and failure of the MOVs due to lightning surges are one of the concerns of surge protection designers that usually lead to overdesigned or ineffective surge ...
Dawood Talebi Khanmiri, Roy Ball, Brad Lehman   +2 more
openaire   +1 more source

Physics of degradation in GaAs-based heterojunction bipolar transistors

Microelectronics Reliability, 1999
Abstract The GaAs HBT has recently become the technology of choice in particularly demanding wireless communications applications. However, controversy about HBT reliability is still widespread, with conflicting claims for lifetime and activation energy.
openaire   +1 more source

Parasitic bipolar transistor induced latch and degradation in SOI MOSFET's

1991 IEEE International SOI Conference Proceedings, 2002
Direct measurement data show close correlation between the turn-on of a parasitic source-body-drain bipolar transistor and the single-transistor latch in SOI (silicon-on-insulator) MOSFETs. Interface state density generation and hot hole trapping in the gate oxide have been observed for SOI MOSFETs biased in this latch regime. Furthermore, experimental
T.-D. Her, P.S. Liu, D.S. Quon, G.P. Li, R. Kjar, J. White   +5 more
openaire   +1 more source

Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

IEEE Transactions on Nuclear Science, 2002
The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current.
null Xinwen Hu, B.K. Choi, H.J. Barnaby, D.M. Fleetwood, R.D. Schrimpf, K.F. Galloway, R.A. Weller, K. McDonald, U.K. Mishra, R.W. Dettmer   +9 more
openaire   +1 more source

Influence of Oxide-Damage on Degradation-Effects in Bipolar-Transistors

1993
To optimize sub-micron bipolar devices with respect to speed and stability, the precize physical mechanisms have to be understood and modeled, which describe the emitter-base breakdown itself, the charge injection into the emitter-base cap oxide and the resulting change of both forward and reverse charactersitics.
W. Bergner, B. Seidl, H. Wurzer, R. Mahnkopf, H. Klose   +4 more
openaire   +1 more source

Mechanisms of ionizing-radiation-induced degradation in modern bipolar devices

Proceedings of the 1991 Bipolar Circuits and Technology Meeting, 2002
The perimeter dependence of ionizing-radiation-induced increases in base current in both poly-emitter and crystalline-emitter devices is examined. The increase in base current occurs at the surface near the emitter-base junction. In the poly-emitter devices, the increase in base current is due to a buildup of interface states.
R.N. Nowlin, R.D. Schrimpf, E.W. Enlow, W.E. Combs, R.L. Pease   +4 more
openaire   +1 more source

Operation of Silicon Carbide BJTs Free from Bipolar Degradation

Materials Science Forum, 2010
The mechanisms of bipolar degradation in silicon carbide BJTs are investigated and identified. Bipolar degradation occurs as result of stacking fault (SF) growth within the low-doped collector region. A stacking fault blocks vertical current transport through the collector, driving the defective region into saturation. This results in considerable drop
Andrei O. Konstantinov, Martin Domeij, Carina Zaring, Imre Keri, Jan Olov Svedberg, Krister Gumaelius, Mikael Östling, Mats Reimark   +7 more
openaire   +1 more source

On noise sources in hot electron-degraded bipolar junction transistors

Journal of Applied Physics, 1997
The effects of electrical stress on static characteristics and power spectral density, SIb, of base current, Ib, fluctuations at low frequencies, f<1 kHz, have been studied in quasiself-aligned bipolar n-p-n junction. In as-fabricated devices SIb∝1/AE, where AE is the transistor emitter area, whereas in strongly degraded transistors Sib∝1/PE ...
P. Llinares, G. Ghibaudo, J. A. Chroboczek   +2 more
openaire   +1 more source

Double-Implanted 4H-SiC Superjunction UMOSFET without Bipolar Degradation

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials
Abstract We demonstrated trench-gate 4H-SiC superjunction MOSFET (SJUMOS) without bipolar degradation using a double implantation process with a multi-epitaxial method. A conventional SJUMOS with a single implantation of aluminum ions can suppress bipolar degradation at the current stress below 1000 A cm−2 because the carrier lifetime of
Kensuke Takenaka, Takeshi Tawara, Syunki Narita, Shinsuke Harada   +3 more
openaire   +1 more source