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Gain degradation of lateral and substrate pnp bipolar junction transistors
IEEE Transactions on Nuclear Science, 1996The effect of dose rate on radiation-induced current gain degradation at 20 krad(Si) was quantified for lateral and substrate pnp bipolar transistors over the range of 0.001 to 294 rad(Si)/s. Degradation increases monotonically with decreasing dose rate, such that, at an emitter-to-base voltage of 0.7 V, radiation-induced excess base current differs by
S.C. Witczak +8 more
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Simulation of hot electron induced degradation in silicon bipolar transistors
Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting, 2003A hot electron degradation model for bipolar transistors is presented which calculates the damage on a spatially-dependent, two-dimensional, microscopic level. The model first uses a hydrodynamic transport model to calculate the hot electron current density.
C.-J. Huang +4 more
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Evaluation of Bipolar Degradation in SiC MOSFETs for Converter Design
2023 IEEE Energy Conversion Congress and Exposition (ECCE), 2023Yifei Wu +8 more
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The Effect of Insulation Coatings on Forward Beta Degradation in Bipolar Transistors
19th International Reliability Physics Symposium, 1981Uncoated, SiO2-coated, and polyimide-coated NPN discrete bipolar transistors were subjected to forward life stressing at temperatures between 100°C and 200°C, and at stress current densities in metal lines between 0.2 and 0.8 × 106 A/cm2. The changes of current gain (beta) in these transistors were monitored as the function of stress time up to 1000 ...
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Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors
2014While the SiGe HBT evolution has led to the significant proliferation of BiCMOS technologies and mixed-signal applications, a host of reliability issues has come to the forefront due to its suitability for multiple applications ranging from high-performance analog to millimeter-wave applications. Hot-carrier induced reliability degradation mechanism is
Partha S. Chakraborty, John D. Cressler
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New Mechanism For Bipolar Degradation In Sub-micron BiCMOS
Symposium 1993 on VLSI Technology, 1993null Bude, null Kizilyalli
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Effects of constant voltage stress on bipolar degradation in 4H-SiC IGBT
Journal of Crystal Growth, 2023Xiping Niu, Ling Sang, Liuan Li
exaly
Pseudocapacitive Ti/RuO2-IrO2-RhOx electrodes with high bipolar stability for phenol degradation
Separation and Purification Technology, 2021Huachang Jin, Xueming Chen
exaly