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Simulation of hot electron induced degradation in silicon bipolar transistors

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting, 2003
A hot electron degradation model for bipolar transistors is presented which calculates the damage on a spatially-dependent, two-dimensional, microscopic level. The model first uses a hydrodynamic transport model to calculate the hot electron current density.
C.-J. Huang   +4 more
openaire   +1 more source

Hot-electron degradation of bipolar transistors

1995
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995. ; Includes bibliographical references (leaves 81-82). ; by Noah Zamdmer. ; M.S.
openaire   +1 more source

Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors

2014
While the SiGe HBT evolution has led to the significant proliferation of BiCMOS technologies and mixed-signal applications, a host of reliability issues has come to the forefront due to its suitability for multiple applications ranging from high-performance analog to millimeter-wave applications. Hot-carrier induced reliability degradation mechanism is
Partha S. Chakraborty, John D. Cressler
openaire   +1 more source

Evaluation of Bipolar Degradation in SiC MOSFETs for Converter Design

2023 IEEE Energy Conversion Congress and Exposition (ECCE), 2023
Yifei Wu   +8 more
openaire   +1 more source

New Mechanism For Bipolar Degradation In Sub-micron BiCMOS

Symposium 1993 on VLSI Technology, 1993
null Bude, null Kizilyalli
openaire   +1 more source

Effects of constant voltage stress on bipolar degradation in 4H-SiC IGBT

Journal of Crystal Growth, 2023
Liuan Li, Ling Sang, Xiping Niu
exaly  

Pseudocapacitive Ti/RuO2-IrO2-RhOx electrodes with high bipolar stability for phenol degradation

Separation and Purification Technology, 2021
Huachang Jin, Xueming Chen
exaly  

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