Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors. [PDF]
Li E +9 more
europepmc +1 more source
Composition engineering of Sb–Bi‐based systems enables tunable ionic conduction and stable, lead‐free memristors. The interplay between capacitive and inductive processes gives rise to strong synaptic functionalities, highlighting their potential for emerging neuromorphic computing applications.
Ramesh Kumar +5 more
wiley +1 more source
Optimizing Energy/Current Fluctuation of RF-Powered Secure Adiabatic Logic for IoT Devices. [PDF]
Ribeiro BF, Takahashi Y.
europepmc +1 more source
Breaking the p-type doping barrier in β-Ga<sub>2</sub>O<sub>3</sub>: a GaN-based heterojunction bipolar transistor with high gain, high breakdown, and RF capability. [PDF]
Than PH, Than TQ, Takaki Y.
europepmc +1 more source
Highly Efficient Conductivity Modulation via Stacked Multi-Gate Graphene Ambipolar Transistors. [PDF]
Nie C +5 more
europepmc +1 more source
Research on Radiation-Hardened RCC Isolated Power Supply for High-Radiation-Field Applications. [PDF]
Lu X +7 more
europepmc +1 more source
Overview of the Properties and Formation Process of Interface Traps in MOS and Linear Bipolar Devices. [PDF]
Ren Y, Zhu M, Dai X, Li L, Liu M.
europepmc +1 more source
Role of the channel on the memory window of HfZrO<sub>x</sub> ferroelectric field-effect transistors with p-type Si-doped InZnO<sub>x</sub> channel. [PDF]
Park H, Lim S, Lee S, Lee JW, Woo J.
europepmc +1 more source
Design of a Bandgap Reference Circuit for MEMS Integrated Accelerometers. [PDF]
Zhang W +5 more
europepmc +1 more source
A 3.0-V, High-Precision, High-PSRR BGR with High-Order Compensation and Improved FVF Pre-Regulation. [PDF]
Shen Y +7 more
europepmc +1 more source

