Results 21 to 30 of about 2,489 (207)
Cascoded Active Quencher for SPADs With Bipolar Differential Amplifier in 0.35 μm BiCMOS
IEEE Photonics Journal, 2022 Fast active quenching of single-photon avalanche diodes (SPADs) is important to reduce the afterpulsing probability (APP). An option to reduce the reaction time of electronics to a SPAD's avalanche is to design a quencher exploiting bipolar ...
Bernhard Goll +2 more
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A Novel Low Dynamic Resistance Dual-Directional SCR With High Holding Voltage for 12 V Applications
IEEE Journal of the Electron Devices Society, 2020 The excellent area efficiency of dual-directional SCRs (DDSCRs) have made them desirable for low-voltage and high-voltage applications. However, to implement the required symmetrical structure, conventional DDSCRs have to lengthen their ESD discharge ...
Kyoung-Il Do, Yong-Seo Koo
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Hyperchaotic Self-Oscillations of Two-Stage Class C Amplifier With Generalized Transistors
IEEE Access, 2021 This paper yields process of development, numerical analysis, lumped circuit modeling, and experimental verification of a new hyperchaotic oscillator based on the fundamental topology of two-stage amplifier.
Jiri Petrzela
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Damage Effect of Single and Sequential Neutron/γ Irradiation on Bipolar Device
Yuanzineng kexue jishuBipolar transistors are widely used in electronic circuits and serve as core components in various devices. In the complex radiation environments, electronic circuits are exposed to more than one type of radiation particle.
XING Jiabin1, WANG Kai2, CAO Fei1, YANG Jianqun2, QIN Jianqiang1
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IEEE Photonics Journal, 2011 The past several years have witnessed the emergence of a subfield of photonics in which the unique optical and electronic properties of microplasmas and gases are coupled with solid phase materials and optical components to realize photodetectors ...
J. G. Eden
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Advances in Mechanical Engineering, 2017 This article deals with incipient fault of insulated-gate bipolar transistors to improve the safety of traction systems of China Railway High-speed 5. Combining with the pulse width modulated strategy which makes signals variate periodically, the multi ...
Hongtian Chen +3 more
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Advanced Functional Materials, EarlyView.Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2015 Recently published reports suggest that symmetric lateral bipolar transistors on semiconductor-on-insulator (SOI) is CMOS compatible in fabrication process, and can be much denser than CMOS due to their much larger (5-10× larger) drive-current ...
Tak H. Ning, Jin Cai
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Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
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Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
Mokslas: Lietuvos Ateitis, 2010 The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
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