Results 81 to 90 of about 2,489 (207)
This work developed a spherical nucleic acid stabilized cage‐type 3D electrochemiluminescence reporter probe for amplification‐free and ultrasensitive detection of pathogenic. Furthermore, a hand‐held detection device was designed, and we established a straightforward workflow enabling sample to answer within 15 min.
Yu Fu +11 more
wiley +1 more source
A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a confined
Noriko Kurose +6 more
doaj +1 more source
Ultrathin Hafnium‐Based Ferroelectric Devices for In‐Memory Computing Applications
Hafnium‐based ferroelectric devices exhibit advantages in nonvolatile storage, low power consumption, and ultrahigh operation speed, positioning them as strong candidates for constructing hardware neural networks. ABSTRACT The discovery of ferroelectricity in HfO2‐based ferroelectrics at the ultrathin scale has reignited enthusiasm for ferroelectric ...
Chenghong Mo +3 more
wiley +1 more source
This review first introduces the fundamental concepts of artificial synapses and synaptic plasticity, then discusses the device structures and operation mechanisms of optoelectronic synapses based on two‐dimensional transition metal dichalcogenides, highlights their applications in neuromorphic vision systems and computing, and concludes with key ...
Xiaona Sun +3 more
wiley +1 more source
Increasing requirements for high switching frequency and high power density have driven the development of gallium nitride power transistors. Among them, some GaN transistors feature a noninsulating gate, such as gate injection transistors and Schottky ...
Xiaomeng Geng +4 more
doaj +1 more source
Single‐domain Si‐doped β‐Ga2O3 thin films grown on off‐axis sapphire eliminate domain boundaries, improving transport and photogating. Gate‐pulse modulation suppresses persistent photoconductivity, yielding ultrafast response and high detectivity. Integrated into a 24 × 24 array, the devices enable high frame rate DUV imaging and energy‐efficient ...
Jae Young Kim +9 more
wiley +1 more source
Characterization and Modeling of SH in Multi-Finger RF LDMOS Transistors Using BSIM-BULK Model
In this work, we present self-heating (SH) characterization and modeling of 130 nm Bipolar-CMOS-DMOS (BCD) technology node multi-finger Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) transistors using extensive DC and S-parameter ...
Ayushi Sharma +5 more
doaj +1 more source
Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda +7 more
wiley +1 more source
Artificial sensory and motor nervous systems enabled by bioinspired nanowire heterostructure synapse
A p‐i‐n heterostructured junction synaptic transistor was fabricated, composed of poly(3‐hexylthiophene‐2,5‐diyl) nanowire thin‐film/poly(methyl methacrylate)/ZnO nanowires (PZJ STs), which can emulate biological sensory and motor nervous systems.
Lu Yang +7 more
wiley +1 more source
We compare the module performance of two‐terminal, three‐terminal, and four‐terminal perovskite/silicon modules in terms mismatch, thermalization, and interconnection losses. For each configuration, the bandgap energy of the perovskite layer is optimized for different locations.
Youri Blom +4 more
wiley +1 more source

