Results 131 to 140 of about 236,167 (195)
The Microstructure, Mechanical, and Friction-Wear Properties of Boron Carbide-Based Composites with TiB2 and SiC Formed In Situ by Reactive Spark Plasma Sintering. [PDF]
Materials (Basel)Twardowska A, Kowalski M.
europepmc +1 more source
Tuning the deformation mechanisms of boron carbide via silicon doping. [PDF]
Sci Adv, 2019 Xiang S +11 more
europepmc +1 more source
Oxidation behaviour of boron carbide
Journal of Nuclear Materials, 1990 The oxidation behaviour of various boron-carbide samples have been studied by photoelectron spectroscopy. The exposure of sputter-cleaned surfaces to molecular oxygen at room temperature did not cause a measurable surface oxidation. An increased reactivity has been found by irradiating boron carbide with energetic oxygen ions.
Zehringer, R. +3 more
openaire +3 more sources
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Sintering of Boron and Boron Carbide
Journal of Solid State Chemistry, 2000An investigation of sintering kinetics of boron and boron carbide is presented. The influence of the powder size distribution on the temperature dependence of sintering, on reaching a high final density, and on gaining a homogeneous grain size has been shown.
G.I. Kalandadze +2 more
exaly +2 more sources
MRS Proceedings, 2004 ABSTRACTPoly(norbornenyldecaborane) (PND) was synthesized via ruthenium catalyzed ring opening metathesis polymerization and was found to be a good single-source polymeric boron carbide precursor. Polymer blends of PND and allylhydridopolycarbosilane (AHPCS) were also found to be excellent precursors to boron-carbide/silicon-carbide composite materials.
Xiaolan Wei +4 more
openaire +2 more sources
Advanced microstructure of boron carbide
Journal of Physics: Condensed Matter, 2012 The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these ...
Werheit, Helmut, Shalamberidze, Sulkhan
core +5 more sources
Fabrication of Boron‐Carbide/Boron Heterojunction Devices [PDF]
Applied Physics Letters, 1996 We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a boron–carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV
Peter A Dowben, Dongjin Byun
exaly +2 more sources
Characterization of Boron Carbide Particles and Its Shielding Behavior Against Neutron Radiation
Energy Conversion and Management, 2013 Boron minerals, considered future essential materials, can be used as raw materials in the production of boron carbide. In this study, boron carbide, the hardest material after diamond and cubic boron nitride, is characterized and the neutron shielding ...
Sabriye Pişkin, Nurcan Tugrul
exaly +2 more sources
Asymmetric twins in boron rich boron carbide
Physical Chemistry Chemical Physics, 2018Twin boundaries (TBs) play an essential role in enhancing the mechanical, electronic and transport properties of polycrystalline materials.
Xiaokun Yang, William A. Goddard, Qi An
openaire +3 more sources
Phosphorus doping of boron carbides
Physical Review B, 1993Substitution of an electron donor such as phosphorus for a carbon or boron atom in [ital p]-type semiconducting boron carbides is expected to reduce the hole concentration. Phosphorus-doped boron carbide samples have been prepared by hot isostatic pressing with homogeneous dopant levels of up to one phosphorus atom per ten unit cells.
, Aselage +8 more
openaire +2 more sources