Results 151 to 160 of about 9,993 (282)
New Icosahedral Boron Carbide Semiconductors
, 2017 Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives
Echeverria Mora, Elena Maria
core
Chemistry–Methods, Volume 6, Issue 7, July 2026.Operando X‐ray emission spectroscopy (XAS) at industrial temperature and pressure is enabled at European Synchrotron Radiation Facility (ESRF) by BM30 (FAME‐PIX) and BM16 (FAME‐UHD). High‐flux optics, a 16‐element HPGe detector and a 14‐crystal analyzer for high‐energy‐resolution fluorescence detection‐XAS/X‐ray emission spectroscopy (HERFD‐XAS/XES ...
Abdallah Nassereddine +14 more
wiley +1 more source
Optimum pyrolysis conditions to prepare the most crystalline boron carbide powder from boric acid-mannitol complex ester. [PDF]
Turk J Chem, 2023 Pekdemir AD, Önal M, Sarikaya Y.
europepmc +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 4, July 2026.This review provides an overview of recent developments in metal organic framework (MOF)‐based and MOF‐derived composites for efficient oxygen evolution reaction. This review also emphasizes the structural design of electrocatalyst, active site optimization, and emerging prospects of their use in practical electrolyzer systems.
Bhagyashri B. Kamble +7 more
wiley +1 more source
Continuous SiC Skeleton-Reinforced Reaction-Bonded Boron Carbide Composites with High Flexural Strength. [PDF]
Materials (Basel), 2023 Xia Q, Sun S, Ye J, Zhang C, Ru H.
europepmc +1 more source
Advanced Engineering Materials, Volume 28, Issue 12, 17 June 2026.A numerical model resulting from irreversible thermodynamics for describing transport processes is introduced, focusing on thermodynamic activity gradients as the actual driving force for diffusion. Implemented in CUDA C++ and using CalPhaD methods for determining the necessary activity data, the model accurately simulates interdiffusion in aluminum ...
Ulrich Holländer +3 more
wiley +1 more source
Contribution of boundary non-stoichiometry to the lower-temperature plasticity in high-pressure sintered boron carbide. [PDF]
Nat Commun, 2023 Xu H +12 more
europepmc +1 more source
Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor
physica status solidi (a), Volume 223, Issue 11, 10 June 2026.We introduce a diamond optically gated field effect transistor (DOGFET) which combines high‐speed high‐power operation with exotic single transistor memory. The transistor uses deep level donor type nitrogen traps in type 1b diamond that are optically excited to enable electrostatic gating of the device.
Soumak Nandi +9 more
wiley +1 more source
Boron Carbide as an Electrode Material: Tailoring Particle Morphology to Control Capacitive Behaviour. [PDF]
Materials (Basel), 2023 Avcıoğlu S +4 more
europepmc +1 more source
Deterministic Detection of Single Ion Implantation
Advanced Engineering Materials, Volume 28, Issue 11, 3 June 2026.Focused ion beam implantation with high detection efficiencies will enable the rapid and scalable fabrication of advanced spin‐based technologies such as qubits. This work presents the detection efficiencies of a wide range of ions implanted into solid‐state hosts, with efficiencies of >90% recorded for ion species and substrate combinations of ...
Mason Adshead +6 more
wiley +1 more source