Results 141 to 150 of about 236,167 (195)

Determination of free graphite in textured samples of boron carbide and boron carbide-silicon carbide composites

Journal of the Less Common Metals, 1986
Abstract The common X-ray diffractometer powder techniques used to determine the amount of free graphite in boron carbide usually do not include any corrections for grain orientation. It has also been shown that the preparation of the samples by grinding and the addition of plate-like graphite powder induces a preferential orientation of the grains ...
Bougoin, M., Fillit, R.Y., Thevenot, F., Bruyas, H.   +3 more
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Boron Carbide/Boron Carbide-Carbon Nanofibers Laminates with Weak Interfaces

2010
Three layered B4C/B4C-Cnanofibers laminates have been produced using a hot pressing technique. The laminates were designed with thick (~2.6 mm) outer layers of B4C and a thin (~90 µm) center layer of B4C-70 wt% Cnanofibers. It was found that low tensile thermal residual stress develops in the thick B4C outer layers.
Orlovskaya, Nina, Lugovy, Mykola, Slyunyayev, Victor, Subbotin, Vladimir, Liang, Fei, Gou, Jihua, Kuebler, Jakob, Graule, Thomas   +7 more
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The melting of boron carbide and the homogeneity range of the boron carbide phase

Journal of the Less Common Metals, 1979
Abstract Various mixtures of boron and carbon were electron beam melted. The samples were characterized by electron microprobe analysis, metallographic techniques, X-ray diffraction and Knoop microhardness measurements. The metallographic investigations, together with the electron microprobe phase analysis, showed that the boron carbide phase exists ...
M Bouchacourt, F Thevenot
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Ternary Metal Boron Carbides

International Journal of Refractory Metals and Hard Materials, 1999
Based on a simple principle of order: i.e. the ability of the metal species to form or not to form binary bondes, binary carbides and ternary compounds, phase equilibria of all hitherto known ternary metal boron systems are classified by four major categories. Compound formation is generally observed with rather electropositive metal elements.
P. Rogl, H. Bittermann
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Pressureless sintering of titanium carbide doped with boron or boron carbide

Journal of the European Ceramic Society, 2017
Abstract Titanium carbide ceramics with different contents of boron or B 4 C were pressureless sintered at temperatures from 2100 °C to 2300 °C. Due to the removal of oxide impurities, the onset temperature for TiC grain growth was lowered to 2100 °C and near fully dense (>98%) TiC ceramics were obtained at 2200 °C.
Yifeng Gu, Ji-Xuan Liu, Fangfang Xu, Guo-Jun Zhang   +3 more
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Thermal expansion of boron and boron carbide

Journal of the Less Common Metals, 1986
Abstract Thermal expansion of poly crystalline α-rhombohedral boron (in the range from 300 to 1270 K), of β-rhombohedral boron (from 300 to 1470 K) and boron carbide B 4 C (from 300 to 1970 K) have been investigated by means of high temperature X-ray diffractometry. The linear coefficients of thermal expansion perpendicular ( α ⊥ ) and parallel ( α
G.V Tsagareishvili, T.G Nakashidze, J.Sh Jobava, G.P Lomidze, D.E Khulelidze, D.Sh Tsagareishvili, O.A Tsagareishvili   +6 more
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Thermal properties of boron and boron carbides

AIP Conference Proceedings, 1986
The specific heat of β‐B shows the features characteristic for pure dielectric crystals. At low temperatures, it varies as T3; from the prefactor the Debye temperature is determined to 1520 K. In boron carbides, however, low temperature anomalies have been observed.
P. R. H. Türkes, E. T. Swartz, R. O. Pohl   +2 more
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Sputtering behavior of boron and boron carbide

Journal of Nuclear Materials, 1992
Sputtering yields of boron were measured with D + and B + ions for normal and oblique angles of incidence. Self-sputtering data of boron carbide were simulated in the experiment by using Ne + ions. The energies of the impinging ions were between 20 eV and 10 keV.
Hechtl, E., Mazanec, A., Eckstein, W., Roth, J., Garcia-Rosales, C.   +4 more
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Effect of Boron, Boron Carbide and Alumina Additions on the Sintering of Silicon Carbide

Transactions of the Indian Ceramic Society, 1990
The effect of boron, boron carbide and alumina, all with carbon additions, on the sintering behaviour of silicon carbide powders obtained by silicon-carbon reaction and silica-carbon reaction was investigated. The concentrations of these additives—B, B4C, Al2O3, C—were varied up to 5 wt%.
S. Ramanatahan, Ram Prasad, C. K. Gupta
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Processing of silicon carbide–boron carbide–aluminium composites

Journal of the European Ceramic Society, 2009
Abstract The aim of this work was to shed light on the wetting mechanism in the SiC–B 4 C–Al system and to explore processing routes that enable infiltration of Al alloys into these ceramic powder mixtures without the formation of the deleterious reaction product Al 4 C 3 .
Arslan, Gürsoy, Kalemtaş, Ayşe
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