Results 91 to 100 of about 215,040 (353)

Influence of Cooling Rate on Primary Silicon Size in Hypereutectic Al–Si Alloy Fabricated by Laser Powder Bed Fusion

open access: yesAdvanced Engineering Materials, EarlyView.
Al–Si alloys are particularly in demand for automotive and electronic applications, thanks to their excellent wear and thermal properties. Nevertheless, when processed by conventional methods with low cooling rates, the coarse primary Si phases are responsible for increasing brittleness and inducing crack propagation.
Layla Shams Tisha   +3 more
wiley   +1 more source

Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD

open access: yesResults in Physics, 2018
This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 ...
Ran He   +7 more
doaj  

Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

open access: yesAdvances in Condensed Matter Physics, 2015
With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications.
Xiao-Yu Tang, Ke Dong
doaj   +1 more source

Experimental Study on Breakdown Characteristics of Transformer Oil Influenced by Bubbles

open access: yesEnergies, 2018
Bubbles will reduce the electric strength of transformer oil, and even result in the breakdown of the insulation. This paper has studied the breakdown voltages of transformer oil and oil-impregnated pressboard under alternating current (AC) and direct ...
Chunxu Qin   +5 more
doaj   +1 more source

Non-Linear I-V Characteristics of Double Schottky Barriers and Polycrystalline Semiconductors

open access: yes, 1992
An attempt to determine theoretically the highly non-linear current-voltage (I-V) characteristics of polycrystalline semiconductors, such as ZnO-based varistors, is made from the electrical properties of individual grain boundaries under dc bias.
Bernasconi   +30 more
core   +1 more source

Non‐Destructive and Mechanical Characterization of the Bond Quality of Co‐Extruded Titanium‐Aluminum Profiles

open access: yesAdvanced Engineering Materials, EarlyView.
This study investigates the bond quality of co‐extruded aluminum–titanium hybrid profiles, focusing on the lateral angular co‐extrusion (LACE) process. It examines how heat treatments (HT) affect intermetallic phase formation, bond strength, and material properties.
Norman Mohnfeld   +9 more
wiley   +1 more source

Impulse Breakdown Characteristics of Main Gap in the Presence of a Local Discharge

open access: yesJournal of Applied Science & Process Engineering, 2019
The characteristics of impulse breakdown voltages and the influence of the position of third electrode in air gap are investigated experimentally to study the parameters influencing the breakdown voltage in the presence of metallic objects around the ...
Abderrahmane Settaouti
doaj   +1 more source

Study of second breakdown in power transistors using infrared techniques [PDF]

open access: yes, 1971
Infrared thermal maps pinpoint exact location where second breakdown will occur before phenomenon happens and before physical damage develops at hot spot. Crystal structure analysis at that point determines cause of fault.

core   +1 more source

A Novel Simulation Approach for Damage Evolution during Tailored Forming

open access: yesAdvanced Engineering Materials, EarlyView.
Traditional damage models are struggling to accurately and efficiently simulate large‐scale three‐dimensional models with a great number of degrees of freedoms. A new gradient‐enhanced damage model based on the extended Hamilton principle can significantly reduce the computation time while ensuring mesh‐independence which is suitable to use in tailored
Fangrui Liu   +2 more
wiley   +1 more source

Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes [PDF]

open access: yes, 2005
The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise and breakdown voltage are modeled for avalanche photodiodes (APDs), both with InP and with InAlAs multiplication regions.
David, J.P.R.   +3 more
core   +2 more sources

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