Results 61 to 70 of about 47,401 (167)

Prediction of DC Breakdown Voltage of Rod–Plate Gaps under Full-Flame Bridging Conditions

Fire
In order to evaluate the risk of transmission line tripping due to wildfires, it is necessary to predict the breakdown voltage of the insulation gap under the flame.
Ziheng Pu, Yuan Li, Peng Li, Kuan Ye, Kai Zhou, Ruizhe Zhang   +5 more
doaj   +1 more source

Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT. [PDF]

Micromachines (Basel), 2021
Khediri A, Talbi A, Jaouad A, Maher H, Soltani A.   +4 more
europepmc   +1 more source

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage. [PDF]

Micromachines (Basel), 2021
Liu D, Li T, Tang B, Zhang P, Wang W, Liu M, Li Z.   +6 more
europepmc   +1 more source

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage. [PDF]

Micromachines (Basel), 2021
Xia X, Guo Z, Sun H.
europepmc   +1 more source

Voltage-Stabilizer-Grafted SiO₂ Increases the Breakdown Voltage of the Cycloaliphatic Epoxy Resin. [PDF]

ACS Omega, 2021
Qin Y, Zhang S, Han S, Xu T, Liu C, Xi M, Yu X, Li N, Wang Z.   +8 more
europepmc   +1 more source

Effect of Conducting, Semi-Conducting and Insulating Nanoparticles on AC Breakdown Voltage and Partial Discharge Activity of Synthetic Ester: A Statistical Analysis. [PDF]

Nanomaterials (Basel), 2022
Khelifa H, Beroual A, Vagnon E.
europepmc   +1 more source

Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs. [PDF]

Micromachines (Basel), 2022
Wang H, Shi Y, Xin Y, Liu C, Lu G, Huang Y.   +5 more
europepmc   +1 more source

On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs. [PDF]

Micromachines (Basel), 2021
Zagni N, Chini A, Puglisi FM, Pavan P, Verzellesi G.   +4 more
europepmc   +1 more source

Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors. [PDF]

Materials (Basel), 2020
Hsieh YL, Chang LB, Jeng MJ, Li CY, Shih CF, Wang HT, Ding ZX, Chang CN, Lo HZ, Chiang YP.   +9 more
europepmc   +1 more source

High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates. [PDF]

Nanomaterials (Basel)
Li S, Wu M, Yang L, Lu H, Hou B, Zhang M, Ma X, Hao Y.   +7 more
europepmc   +1 more source