Results 91 to 100 of about 2,260 (262)

Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices

open access: yesMicromachines
This study focuses on the impact of negative fixed charge, achieved through fluorine (F) implantation, on breakdown voltage (BV) enhancement in vertical GaN Schottky diodes.
Vishwajeet Maurya   +4 more
doaj   +1 more source

Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer

open access: yesNanoscale Research Letters, 2019
An ultra-low specific on-resistance (R on,sp) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper.
Zhuo Wang   +5 more
doaj   +1 more source

Schottky-contact technology in InAlN/GaN HEMTs for breakdown voltage improvement

open access: yes, 2013
In this paper, we demonstrate a 253% improvement in the off-state breakdown voltage (BV) of the lattice-matched In{0.17}\hbox{Al}{0.83} \hbox{N/GaN}$ high-electron-mobility transistors (HEMTs) by using a new Schottky-contact technology.
Zhou, Qi   +6 more
core   +1 more source

Lesion Site‐Targeted Microspheres Modulate Nav1.7‐Related Signaling for Osteoarthritis Treatment

open access: yesAdvanced Science, EarlyView.
Cartilage‐targeted carbamazepine‐loaded WYRGRL‐modified composite microspheres (CBZ/WCOM) anchor to exposed type II collagen in osteoarthritic lesions and release carbamazepine under acidic conditions. This bind‐then‐release platform modulates Nav1.7‐related sodium signaling, Na⁺/Ca²⁺ exchanger‐associated Ca2+ dynamics, and heat shock protein 70 ...
Cheng Chen   +15 more
wiley   +1 more source

P-channel lateral double-diffused metal-oxide-semiconductor field-effect transistor with split N-type buried layer for high breakdown voltage and low specific on-resistance

open access: yes, 2012
[[abstract]]Many high voltage complementary metal-oxide-semiconductor (HV-CMOS) processes are modified from a standard 5 V CMOS process by adding an N-type heavily doped layer under the P-well of a HV-PMOS drain terminal to isolate a high voltage P-well ...
Liaw CW;Chang CH;Lin MJ;King Y.C;Hsu CCH;Lin CJ
core   +1 more source

Biodegradable Zn‐Based Implants: Progress, Challenges, and Pathways toward Clinical Translation

open access: yesAdvanced Science, EarlyView.
Exploring biodegradable Zn‐based implants offers a promising pathway to next‐generation biomedical devices with balanced degradation and biocompatibility. A comprehensive overview of biodegradable Zn‐based implants, covering their biological significance, material design principles, and advanced engineering strategies is provided.
Panfeng Zhao   +10 more
wiley   +1 more source

Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

open access: yesPower Electronic Devices and Components
In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaN-on-GaN Schottky diodes is examined through I–V and C–V characterizations.
Vishwajeet Maurya   +10 more
doaj   +1 more source

Ultrasound‐Activatable Piezoelectric Hydrogel Reprograms Mitochondrial Epigenetics for Osteoarthritis Therapy via the mTOR/GATD3A Axis

open access: yesAdvanced Science, EarlyView.
An ultrasound‐activatable piezoelectric hydrogel reprograms chondrocyte mitochondrial epigenetics via the mTOR/GATD3A axis, clearing damaged mitochondria and alleviating osteoarthritis progression in both mouse models and human cartilage explants. ABSTRACT The avascular nature of cartilage hinders drug delivery for osteoarthritis (OA) therapy.
Hui Zheng   +9 more
wiley   +1 more source

A charge-trench-optimized SOI LDMOS low-power switch device

open access: yesAin Shams Engineering Journal
A novel charge trench SOI LDMOS device is proposed to enhance the breakdown voltage (BV) while maintaining reasonable specific on-resistance (Ron, sp). The structure introduces a dielectric charge trench between the top silicon layer and the buried oxide
Shoutong Huang   +2 more
doaj   +1 more source

Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor [PDF]

open access: yes, 2014
Since 2004, graphene as transistor channel has drawn huge amount of attention due to its extraordinary scalability and high carrier mobility. In order to open required bandgap, its nanoribbon form is used in transistors. Breakdown effect modelling of the
Mahdiar, Hosseinghadiry
core  

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