Results 91 to 100 of about 2,260 (262)
Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices
This study focuses on the impact of negative fixed charge, achieved through fluorine (F) implantation, on breakdown voltage (BV) enhancement in vertical GaN Schottky diodes.
Vishwajeet Maurya +4 more
doaj +1 more source
An ultra-low specific on-resistance (R on,sp) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper.
Zhuo Wang +5 more
doaj +1 more source
Schottky-contact technology in InAlN/GaN HEMTs for breakdown voltage improvement
In this paper, we demonstrate a 253% improvement in the off-state breakdown voltage (BV) of the lattice-matched In{0.17}\hbox{Al}{0.83} \hbox{N/GaN}$ high-electron-mobility transistors (HEMTs) by using a new Schottky-contact technology.
Zhou, Qi +6 more
core +1 more source
Lesion Site‐Targeted Microspheres Modulate Nav1.7‐Related Signaling for Osteoarthritis Treatment
Cartilage‐targeted carbamazepine‐loaded WYRGRL‐modified composite microspheres (CBZ/WCOM) anchor to exposed type II collagen in osteoarthritic lesions and release carbamazepine under acidic conditions. This bind‐then‐release platform modulates Nav1.7‐related sodium signaling, Na⁺/Ca²⁺ exchanger‐associated Ca2+ dynamics, and heat shock protein 70 ...
Cheng Chen +15 more
wiley +1 more source
[[abstract]]Many high voltage complementary metal-oxide-semiconductor (HV-CMOS) processes are modified from a standard 5 V CMOS process by adding an N-type heavily doped layer under the P-well of a HV-PMOS drain terminal to isolate a high voltage P-well ...
Liaw CW;Chang CH;Lin MJ;King Y.C;Hsu CCH;Lin CJ
core +1 more source
Biodegradable Zn‐Based Implants: Progress, Challenges, and Pathways toward Clinical Translation
Exploring biodegradable Zn‐based implants offers a promising pathway to next‐generation biomedical devices with balanced degradation and biocompatibility. A comprehensive overview of biodegradable Zn‐based implants, covering their biological significance, material design principles, and advanced engineering strategies is provided.
Panfeng Zhao +10 more
wiley +1 more source
Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment
In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaN-on-GaN Schottky diodes is examined through I–V and C–V characterizations.
Vishwajeet Maurya +10 more
doaj +1 more source
An ultrasound‐activatable piezoelectric hydrogel reprograms chondrocyte mitochondrial epigenetics via the mTOR/GATD3A axis, clearing damaged mitochondria and alleviating osteoarthritis progression in both mouse models and human cartilage explants. ABSTRACT The avascular nature of cartilage hinders drug delivery for osteoarthritis (OA) therapy.
Hui Zheng +9 more
wiley +1 more source
A charge-trench-optimized SOI LDMOS low-power switch device
A novel charge trench SOI LDMOS device is proposed to enhance the breakdown voltage (BV) while maintaining reasonable specific on-resistance (Ron, sp). The structure introduces a dielectric charge trench between the top silicon layer and the buried oxide
Shoutong Huang +2 more
doaj +1 more source
Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor [PDF]
Since 2004, graphene as transistor channel has drawn huge amount of attention due to its extraordinary scalability and high carrier mobility. In order to open required bandgap, its nanoribbon form is used in transistors. Breakdown effect modelling of the
Mahdiar, Hosseinghadiry
core

