Results 111 to 120 of about 2,260 (262)

An improved SiC SWITCH‐MOS with superior forward performance

IET Power Electronics
An improved 4H‐SiC SBD‐wall‐integrated trench metal‐oxide‐semiconductor (SWITCH‐MOS) with n‐bury and split‐gate is proposed. Under the premise of ensuring breakdown voltage (BV), the n‐bury layer can smooth the path to current conduction, which reduces ...
Junji Cheng, Tao Zhong, Huan Li, Ping Li, Bo Yi, Haimeng Huang, Siliang Wang, Qiang Hu, Hongqiang Yang   +8 more
doaj   +1 more source

Carbon Quantum Dots Meet Perovskite Solar Cells: A Review of Multifunctional Synergies

Carbon Energy, EarlyView.
This review highlights the multifunctional role of carbon dots in perovskite solar cells. Their applications as additives and interfacial modifiers are discussed in terms of crystallization control, defect passivation, energy‐level alignment, and environmental stability.
Yagmur Su Sayin, Matteo Bonomo, Nilgun Karatepe, Marta Feroci   +3 more
wiley   +1 more source

p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications

Materials Today Advances
This study integrates a p-type copper gallium oxide (p-CuGaO2) interlayer to enhance the performance of β-Ga2O3-based power devices, addressing challenges in achieving reliable p-type doping.
Chowdam Venkata Prasad, Jang Hyeok Park, Qui Thanh Hoai Ta, Kyong Jae Kim, Ho Jung Jeon, Muzaffar Ali Mir, Mohsin Raza, Nguyen Ngoc Tri, Honggyun Kim, Madani Labed, You Seung Rim   +10 more
doaj   +1 more source

Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

To improve the breakdown voltage (BV), a GaN-based high-electron-mobility transistor with a hybrid AlGaN back barrier (HBB-HEMT) was proposed. The hybrid AlGaN back barrier was constructed using the Al0.25Ga0.75N region and Al0.1G0.9N region, each with a
Jinwei Hu, Jiangfeng Du, Qi Yu, Kuiyuan Tian   +3 more
core   +1 more source

Entropy‐Driven Innovations: Entropy Stabilized Oxides for High‐Performance Next‐Generation Lithium–Sulfur Batteries

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
This article explores high‐entropy‐stabilized oxides (HEOs) as novel functional materials for addressing critical issues in lithium–sulfur (Li–S) batteries, including lithium polysulfide (LPS) shuttling, inadequate conductivity, and slow redox kinetics.
Hassan Raza, Jialiang Wei, Zhicai Wang, Zhaoyang Lv, Junye Cheng, Jia Xu, Liang An, Yuliang Liu, Sergey Ryazantsev, Shukui Li, Guangping Zheng   +10 more
wiley   +1 more source

High voltage InAlN/GaN HFETs achieved by schottky-contact technology for power applications

, 2013
In this paper, a novel approach of Schottky-contact technology for high voltage InAlN/GaN power transistors is demonstrated. The improved breakdown voltage (BV) attributes to the effectively suppressed source carrier injection achieved by the Schottky ...
Zhou, Qi, Chen, Wanjun, Liu, Shenghou, Zhang, Bo, Chen, Kevin J., Feng, Zhihong, Cai, Shujun   +6 more
core   +1 more source

Revealing Structure–Performance Relations in Core‐Shell Catalyst‐Based PEM Water Electrolyzer Anodes with Low Iridium Loading

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Table of Contents The TiO2@IrO2 core–shell architecture ensures high electronic conductivity even at a low iridium content of 10 wt%. The resulting catalyst layer shows significantly higher iridium utilization than a commercial reference, leading to improved PEMWE single‐cell performance at low iridium loading.
Selina Finger, Darius Hoffmeister, Tien‐Ching Ma, Lena Fiedler, A. Lucía Morales, Andreas Körner, Nico Roubicek, Leopold Lahn, Johannes Böhmer, Thomas Przybilla, Erdmann Spiecker, Olga Kasian, Anna T. S. Freiberg, Karl J. J. Mayrhofer, Simon Thiele, Chuyen van Pham, Andreas Hutzler   +16 more
wiley   +1 more source

Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV

This work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities.
Qin, Yuan, Zhang, Yuhao, Guo, Yijin, Song, Qihao, Popa, Daniel, Porter, Matthew, Cheng, Kai, Kravchenko, Ivan, Efthymiou, Loizos, Udrea, Florin, Xiao, Ming, Shao, Linbo, Wang, Han   +12 more
core   +1 more source

Matching TGF‐β1 Activation With Stress‐Responsive Charge‐Reversal Hydrogel Microspheres for the Treatment of Osteoarthritis

Exploration, EarlyView.
Based on the interaction between the weakly cross‐linked disulfide bonds that break under stress and charge‐reversal messenger molecules, we herein achieved nanoparticle charge reversal under stress and constructed a stress‐responsive charge‐reversal hydrogel microsphere system using microfluidic technology.
Feng Lin, Yiwen Xu, Lei Xiang, Yueliang Zhu, Yihan Li, Yaping Zhuang, Zengjie Zhang, Jiayu Chen, Heemin Kang, Ning Zhang, Xiaohua Yu, Wenguo Cui   +11 more
wiley   +1 more source

DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

Advances in Condensed Matter Physics, 2015
An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on
Xiangming Xu, Pengliang Ci, Xiaoyu Tang, Jing Shi, Zhengliang Zhou, Jingfeng Huang, Peng-Fei Wang, David Wei Zhang   +7 more
doaj   +1 more source