Results 221 to 230 of about 210,338 (264)

Bulk-viscosity-driven inflationary model

Physical Review D, 1986
Bulk viscosity associated with the production of heavy particles during the grand-unified-theory phase transition can lead to exponential or ''generalized'' inflation. The condition of inflation proposed is independent of the details of the phase transition and remains unaltered in the presence of a cosmological constant.
, Waga, , Falcão, , Chanda
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Surface-Driven Bulk Reorganization of Gold Nanorods

Nano Letters, 2005
Molecular dynamic simulations are used to study the structural stability of gold nanorods upon heating. We show that the global stability of the rod is governed by the free energetics of its surface. In particular, an instability of surface facets nucleates a bulk instability that leads to both surface and bulk reorganization of the rod.
Wang, Yaping, Teitel, S, Dellago, Christoph   +2 more
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Scaling the bulk-driven MOSFET

2009 International Conference on Microelectronics - ICM, 2009
This paper investigates the impact of device scaling on the bulk-driven MOSFET. In particular, the behavior of g mb is observed across process technology and it is shown that the g mb /g m ratio falls from 0.38 to 0.12 between IBM's 0.25 μm and 65 nm bulk CMOS processes via simulation.
Christopher Urban, James E. Moon, P. R. Mukund   +2 more
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Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS processes

Microelectronics Reliability, 2011
Abstract This paper examines the implications of scaling an n -type bulk-driven MOSFET into the 90 nm node in an effort to make the device suitable for analog designs operating at 0.7 V, the minimum supply voltage predicted for the end of bulk CMOS. Observations will suggest that process scaling has caused the g mb / g m ratio to degrade from 0 ...
Christopher Urban, James E. Moon, Ponnathpur R. Mukund   +2 more
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Transconductance enhancement in bulk-driven input stages

2008 15th IEEE International Conference on Electronics, Circuits and Systems, 2008
This paper presents two different circuit techniques which rely on partial positive feedback to enhance the effective transconductance of a CMOS bulk-driven input stage, thus leading to improved values for the DC gain and the gain-bandwidth product. The first approach modifies the conductance of the active load, while the second solution acts directly ...
Juan Manuel Carrillo, J. Francisco Duque-Carrillo, Guido Torelli   +2 more
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0.5‐V bulk‐driven differential amplifier

International Journal of Circuit Theory and Applications, 2012
SUMMARYA new 0.5‐V fully differential amplifier is proposed in this article. The structure incorporates a differential bulk‐driven voltage follower with conventional gate‐driven amplification stages. The bulk‐driven voltage follower presents differential gain equal to unity while suppressing the input common‐mode voltage.
George Raikos, Spyridon Vlassis
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0.8V bulk-driven variable gain amplifier

2010 17th IEEE International Conference on Electronics, Circuits and Systems, 2010
A low-voltage variable gain amplifier based on PMOS bulk-driven input stage is presented in this paper. The gain of the proposed amplifier has a linear in-dB gain dependency since it utilizes the conventional pseudo exponential approximation function (1+x)/(1−x). The master-slave technique is used in order to control the voltage gain.
George Raikos, Spiridon Vlassis
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Bulk-viscosity-driven asymmetric inflationary universe

Physical Review D, 1988
A primordial net bosonic charge is introduced in the context of the bulk-viscosity-driven inflationary models. The analysis is carried through a macroscopic point of view in the framework of the casual thermodynamic theory. The conditions for having exponential and generalized inflation are obtained. A phenomenological expression for the bulk-viscosity
, Lima, , Portugal, , Waga
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0.5-V Bulk-Driven CMOS Operational Amplifier

IET Circuits, Devices and Systems, 2013
A new solution for a low‐voltage bulk‐driven CMOS operational amplifier is presented in this study. The amplifier is designed using 50 nm process parameters and optimised for 0.5 V supply voltage. The circuit consumes 100 μW, performing 74 dB open‐loop gain, 59 nV/Hz 1/2 input referred noise ...
Tomasz Kulej
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Bulk-Driven Current Differencing Transconductance Amplifier

Circuits, Systems, and Signal Processing, 2011
Low-voltage (LV) low-power (LP) integrated circuit design is becoming a leading trend in VLSI technology, particularly in special portable applications. In this paper, the principle of a bulk-driven MOS transistor is employed in the design of a novel LV LP current differencing transconductance amplifier (CDTA).
Fabian Khateb, Dalibor Biolek
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