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Ranking Biochar-Fluorinated Contaminant Interactions Using Dynamic Signatures. [PDF]
Librici C +7 more
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Comparison of Gate-Driven and Bulk-Driven Current Mirror Topologies
2016 IEEE 19th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2016In this paper, different topologies of gate-driven and bulk-driven current mirrors designed in 90 nm CMOS technology are presented. Since the conventional MOS transistors can work as a bulk-driven device, there is no need for any modification of the existing MOSFET structure or technology process.
Daniel Arbet +2 more
exaly +3 more sources
2011 IEEE International Symposium of Circuits and Systems (ISCAS), 2011
A new CMOS DC level shifter that can be programmed at a level less than the threshold voltage of a MOSFET is proposed. This design technique utilizes a bulk-driven MOSFET, which is biased with a constant reverse voltage, to shift the input. Furthermore since the proposed block is in a class-AB super source follower form, it is power-efficient.
Yasutaka Haga, Izzet Kale
openaire +1 more source
A new CMOS DC level shifter that can be programmed at a level less than the threshold voltage of a MOSFET is proposed. This design technique utilizes a bulk-driven MOSFET, which is biased with a constant reverse voltage, to shift the input. Furthermore since the proposed block is in a class-AB super source follower form, it is power-efficient.
Yasutaka Haga, Izzet Kale
openaire +1 more source

