Results 101 to 110 of about 562 (143)

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. [PDF]

Micromachines (Basel)
Yugender P, Dhar RS, Nanda S, Kumar K, Sakthivel P, Thirumurugan A.   +5 more
europepmc   +1 more source

Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System. [PDF]

Nanomaterials (Basel), 2023
Nanda S, Dhar RS, Awwad F, Hussein MI.
europepmc   +1 more source

Expanding the toolbox of atomic scale processing [PDF]

, 2019
Faraz, Tahsin
core  

Enhanced CPU Design for SDN Controller. [PDF]

Micromachines (Basel)
Bazzi HS, Jaber RA, El-Hajj AM, Hija FA, Haidar AM.   +4 more
europepmc   +1 more source

A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms. [PDF]

Micromachines (Basel)
Bernstein JB, Avraham T, Wang B.
europepmc   +1 more source

An ultra energy-efficient hardware platform for neuromorphic computing enabled by 2D-TMD tunnel-FETs. [PDF]

Nat Commun
Pal A, Chai Z, Jiang J, Cao W, Davies M, De V, Banerjee K.   +6 more
europepmc   +1 more source

A Review of Reliability in Gate-All-Around Nanosheet Devices. [PDF]

Micromachines (Basel)
Wang M.
europepmc   +1 more source

Anisotropic exchange interaction of two hole-spin qubits. [PDF]

Nat Phys
Geyer S, Hetényi B, Bosco S, Camenzind LC, Eggli RS, Fuhrer A, Loss D, Warburton RJ, Zumbühl DM, Kuhlmann AV.   +9 more
europepmc   +1 more source

Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits. [PDF]

Nanomicro Lett
Qin L, Wang L.
europepmc   +1 more source