Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance [PDF]
Frontiers in ElectronicsThis paper comprehensively analyses the RF (Radio Frequency) and wireless performance characteristics of high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs-SOI-FinFET).
Priyanka Agrwal, Ajay Kumar
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Comprehensive Investigation of Truncated Fin GaN FinFET for Improved Analog/RF Performance
IEEE Open Journal of NanotechnologyThis work presents an analysis of the performance of Gallium Nitride Truncated Fin FinFETs (GaN-TF-FinFET) and compares them with conventional (C) FinFET, TF-FinFET, and silicon-on-insulator (SOI) TF-FinFET in analog and RF applications by using advanced
Praween Kumar Srivastava +2 more
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A Stepped-Spacer FinFET Design for Enhanced Device Performance in FPGA Applications. [PDF]
Micromachines (Basel)As transistor dimensions continue to scale below 10 nm, traditional MOSFET architectures face increasing limitations from short-channel effects, gate leakage, and variability.
Zareiee M, Mehrad M, Tawfik A.
europepmc +3 more sources
Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator [PDF]
, 2021 The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime.
Asenov, Asen +6 more
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Nano transistores de efecto de campo tipo aleta para aplicaciones digitales [PDF]
, 2021 The aim of this work is providing to students of electronics, computing and related areas, an overview of the construction and behavior of fin field effect transistors (FinFETs), which are tiny devices, with gate length in the nanometer range, they are ...
García-Rivera, Max +5 more
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Limits on Fundamental Limits to Computation [PDF]
, 2014 An indispensable part of our lives, computing has also become essential to industries and governments. Steady improvements in computer hardware have been supported by periodic doubling of transistor densities in integrated circuits over the last fifty ...
Markov, Igor L.
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, 2021 To present their work in the field of micromachining, researchers from distant parts of the world have joined their efforts and contributed their ideas according to their interest and engagement. Their articles will give you the opportunity to understand
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Low Power FinFET based SRAM Cell Design [PDF]
, 2016 With the incessant developments occurring in VLSI circuits and systems arena and power dissipation becoming a major design constraint, the power component can be considerably reduced through efficient designing of the SRAM memory elements.
, Ayon Manna, Sudarshan Patil, V S Kanchana Bhaaskaran
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Performance Analysis of FinFET Based Inverter circuit, NAND and NOR Gate at 22nm and 14nm Node technologies. [PDF]
, 2015 The size of integrated devices such as PC, mobiles etc are reducing day by day with multiple operations, all of these is happening because of the scaling down the size of MOSFETs which is the main component in memory, processors and so on.
, Raju Hajare, Sunil C, Sumanth Jain P R, Anish Kumar A R, Sriram AS
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Fin Field Effect Transistors Performance in Analog and RF for High-k Dielectrics [PDF]
, 2011 The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The impact of a high-k gate dielectric on the device short channel performance and scalability of nanoscale double gate Fin Field Effect Transistors (FinFET ...
Kumar, P. Vijaya, Nirmal, D.
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