Degradation Measurement and Modelling under Ageing in a 16 nm FinFET FPGA [PDF]
Micromachines, 2023 Most of the latest generation of integrated circuits use FinFET transistors for their performance, but what about their reliability? Does the architectural evolution from planar MOSFET to FinFET transistor have any effect on the integrated circuit ...
Justin Sobas, François Marc
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Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance [PDF]
Frontiers in ElectronicsThis paper comprehensively analyses the RF (Radio Frequency) and wireless performance characteristics of high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs-SOI-FinFET).
Priyanka Agrwal, Ajay Kumar
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Comprehensive Investigation of Truncated Fin GaN FinFET for Improved Analog/RF Performance
IEEE Open Journal of NanotechnologyThis work presents an analysis of the performance of Gallium Nitride Truncated Fin FinFETs (GaN-TF-FinFET) and compares them with conventional (C) FinFET, TF-FinFET, and silicon-on-insulator (SOI) TF-FinFET in analog and RF applications by using advanced
Praween Kumar Srivastava +2 more
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A Stepped-Spacer FinFET Design for Enhanced Device Performance in FPGA Applications. [PDF]
Micromachines (Basel)As transistor dimensions continue to scale below 10 nm, traditional MOSFET architectures face increasing limitations from short-channel effects, gate leakage, and variability.
Zareiee M, Mehrad M, Tawfik A.
europepmc +3 more sources
Nanomaterials, 2023 At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges.
Zhuo Chen +14 more
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Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator [PDF]
, 2021 The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime.
Asenov, Asen +6 more
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Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET
Applied Sciences, 2020 The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of ...
Soohyun Kim +9 more
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Ultra-Low-Power FinFETs-Based TPCA-PUF Circuit for Secure IoT Devices
Sensors, 2021 Low-power and secure crypto-devices are in crucial demand for the current emerging technology of the Internet of Things (IoT). In nanometer CMOS technology, the static and dynamic power consumptions are in a very critical challenge.
Cancio Monteiro, Yasuhiro Takahashi
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Nano transistores de efecto de campo tipo aleta para aplicaciones digitales [PDF]
, 2021 The aim of this work is providing to students of electronics, computing and related areas, an overview of the construction and behavior of fin field effect transistors (FinFETs), which are tiny devices, with gate length in the nanometer range, they are ...
García-Rivera, Max +5 more
core +2 more sources
Ultra-Low Power Oscillator Collapse Physical Unclonable Function Based on FinFET
IEEE Access, 2021 The main purpose of this paper is to achieve ultra-low power Physical Unclonable Function (PUF) to meet the requirements for Internet of Things (IoT) applications.
Amin A. Zayed +3 more
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