Results 31 to 40 of about 544 (110)

Toward 4R Electronics: Liquid‐Metal‐Enabled Thin Film, and Field‐Effect Transistors for Sustainability and E‐Waste Reduction

Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley   +1 more source

Engineered Strain in 2D Materials by Direct Growth on Deterministically Patterned Grayscale Topographies

Advanced Science, Volume 13, Issue 20, 9 April 2026.
ABSTRACT Strain is a proven technique for modifying the bandgap and enhancing carrier mobility in 2D materials. Most current strain engineering techniques rely on the post‐growth transfer of these atomically thin materials from growth substrates to target surfaces, limiting their integration into nanoelectronics.
Berke Erbas, Arindam Bala, Hernan Furci, Anushree Dutta, Naresh Kumar, Renato Zenobi, Giovanni Boero, Andras Kis, Juergen Brugger   +8 more
wiley   +1 more source

Recent Advances in Hafnium Oxide Nanomaterials: From Controlled Synthesis, Structure, and Surface Engineering to Biomedical Applications

Rare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT Hafnium oxide (HfO2) nanoparticles (NPs), derived from a rare‐metal element, have gained increasing attention as a versatile class of functional nanostructures with unique optical, dielectric, and surface properties that enable diverse biomedical applications. As a representative rare‐metal oxide, HfO2 NPs with well‐defined architectures offer
Mothana Hussein Tarawneh, Mohammed Ali Dheyab, Azhar Abdul Rahman, Mutaz Mohammad Alsardi, Azlan Abdul Aziz, Saleh T. Alanezi, Wesam Abdullah, Sara Abdulwahab, Mehran Ghasemlou   +8 more
wiley   +1 more source

Design of low delay low power hybrid logic based flip-flop using FinFET

e-Prime: Advances in Electrical Engineering, Electronics and Energy
The need for a low-power and high-speed technology for computation of digital signals is rising due to the fast growth of technological innovations. Flip-flops serve as fundamental elements in signal processing technologies.
Syed Sadiq Vali, Ashok kumar N
doaj   +1 more source

Programmable Dimensional Lithography with Digital Micromirror Devices for Multifunctional Microarchitectures

Advanced Materials Technologies, Volume 11, Issue 5, 6 March 2026.
This review explores recent advances in digital micromirror device (DMD)‐based lithography, focusing on its programmable light modulation, multi‐material compatibility, and dimensional patterning strategies. It highlights innovations from optical system design to materials integration and multifunctional applications, positioning DMD lithography as a ...
Yubin Lee, Byungcheon Yoo, Chaeyeong Ryu, Jongwon Oh, Dahye Baek, Jiseok Lee   +5 more
wiley   +1 more source

Demonstration Highly Scalability of Ultra-Thin EOT HfO₂-ZrO₂-HfO₂ Gate Stacks With 25 nm L_g FinFET for Advanced CMOS Technology

IEEE Journal of the Electron Devices Society
We demonstrate the high scalability of equivalent oxide thickness (EOT) scaled HfO2-ZrO2-HfO2 (HZH) gate stacks based on FinFETs with a physical gate length $(L_{\mathrm { g}})$ of 25 nm.
Kun Zhong, Zhaohao Zhang, Siyuan Liu, Haiyuan Lyu, Junfeng Li, Huaxiang Yin   +5 more
doaj   +1 more source

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee, Changha Kim, Geun Tae Park, Seung Hun Baek, Myeong Su Shin, Woo Young Choi   +5 more
wiley   +1 more source

Hybrid Convolutional Neural Network‐Analytical Model for Prediction of Line Edge Roughness‐Induced Performance Variations in Fin‐Shaped Field‐Effect Transistor Devices and SRAM

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim, Myongjin Kim, Changwoo Han, Hyoung Won Baac, Changhwan Shin   +4 more
wiley   +1 more source

Low Power and Energy‐Efficient Design of MTJ/FinFET Circuits

Engineering Reports, Volume 8, Issue 3, March 2026.
This work begins by outlining the fundamental concepts of MTJs, FinFETs, and the conventional hybrid CMOS/MTJ framework. It then explains the operating mechanism and configuration of the proposed STT‐MTJ/FinFET‐based OR logic gate. The final sections present the simulation outcomes and analyze the influence of FinFET fin variation.
Pillem Ramesh, Atul S. M. Tripathi
wiley   +1 more source

Ultrathin Hafnium‐Based Ferroelectric Devices for In‐Memory Computing Applications

Information &Functional Materials, Volume 3, Issue 1, Page 8-34, March 2026.
Hafnium‐based ferroelectric devices exhibit advantages in nonvolatile storage, low power consumption, and ultrahigh operation speed, positioning them as strong candidates for constructing hardware neural networks. ABSTRACT The discovery of ferroelectricity in HfO2‐based ferroelectrics at the ultrathin scale has reignited enthusiasm for ferroelectric ...
Chenghong Mo, Zheng Wang, Jialin Meng, Tianyu Wang   +3 more
wiley   +1 more source