Comprehensive Investigation of Truncated Fin GaN FinFET for Improved Analog/RF Performance
IEEE Open Journal of NanotechnologyThis work presents an analysis of the performance of Gallium Nitride Truncated Fin FinFETs (GaN-TF-FinFET) and compares them with conventional (C) FinFET, TF-FinFET, and silicon-on-insulator (SOI) TF-FinFET in analog and RF applications by using advanced
Praween Kumar Srivastava +2 more
doaj +2 more sources
Оценка влияния параметров структуры FinFET на электрические характеристики средствами TCAD-моделирования [PDF]
, 2022 Using TCAD modeling, the effect of changing FinFET structure parameters, such as gate stack layer sizes, rib shape, or doping levels, on the electrical characteristics of the device is investigated.С помощью TCAD-моделирования исследовано влияние ...
Д. С. Силкин +5 more
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chanjunaa/FinFET-Device-Discovery: First release of FinFET-Device-Discovery
, 2023 This is the first release of FinFET-Device ...
chanjunaa
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Thermal modeling of RF FinFET PAs through temperature-dependent X-parameters extracted from physics-based simulations [PDF]
, 2022 FinFET RF technology is increasingly investigated for the deployment of 5G communication systems and beyond. Thermal management represents one of the main problems that must be addressed for the successful design of FinFET-based microwave power ...
Guerrieri, S. Donati +7 more
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Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type [PDF]
, 2017 This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET.
Hashim, Yasir, Yasir Hashim
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A Comparative Radiation Analysis of Reconfigurable Memory Technologies: FinFET versus Bulk CMOS [PDF]
, 2022 This work describes a comparative radiation reliability analysis between two reconfigurable devices with different manufacturing technology: 28 nm CMOS-based and 16 nm FinFET based FPGAs.
C. De Sio +4 more
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Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET
, 2023 Superior scalability and better gate-to-channel capacitive coupling can be achieved with adopting gate-all-around (GAA) device architecture. However, compared against FinFET device structure, the GAA device is not very cost-effective.
Hyoung Won Baac +3 more
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Memories - Materials, Devices, Circuits and SystemsIn this work, a high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs–SOI–FinFET) is presented for high-switching and ultra-low power applications at 7 nm gate length.
Priyanka Agrwal, Ajay Kumar
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Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance
Frontiers in ElectronicsThis paper comprehensively analyses the RF (Radio Frequency) and wireless performance characteristics of high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs-SOI-FinFET).
Priyanka Agrwal, Ajay Kumar
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High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
AIP Advances, 2014 Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit).
C. H. Wang +18 more
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