Results 41 to 50 of about 19,628,440 (150)

Utilizing MRAMs With Low Resistance and Limited Dynamic Range for Efficient MAC Accelerator

IEEE Open Journal of Nanotechnology
The recent advancements in data mining, machine learning algorithms and cognitive systems have necessitated the development of neuromorphic processing engines which may enable resource and computationally intensive applications on the internet-of-Things (
Sateesh, Kaustubh Chakarwar, Shubham Sahay   +2 more
doaj   +1 more source

High‐Mobility and Reliability Ultra‐Thin‐Channel Oxide Semiconductor Field‐Effect Transistors for Chip‐Interconnect‐Embedded Logic and Ferroelectric Memory

Advanced Materials, Volume 38, Issue 52, 16 September 2026.
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chun‐Kuei Chen, Sonu Hooda, Maheswari Sivan, Quanzhen Wan, Marco A. Villena, Bastien Beltrando, Zefeng Xu, Zihang Fang, Evgeny Zamburg, Juan B. Roldán, Luca Larcher, Gaurav Thareja, Aaron Voon‐Yew Thean   +12 more
wiley   +1 more source

Enhancing Performance and Reliability of Hf1‐xZrxO2 Morphotropic Phase Boundary Films via Nanolaminate Structuring and Microwave Annealing

Advanced Materials Technologies, Volume 11, Issue 17, 3 September 2026.
Hf–Zr–O‐based morphotropic phase boundary (MPB) thin films often suffer from limited endurance and poor uniformity due to intrinsic phase instability. This work proposes a nanolaminate architecture that spatially separates competing phases, stabilizes phase formation, and suppresses wake‐up‐induced degradation.
Hojung Jang, Hyunsang Hwang
wiley   +1 more source

Strategies and Challenges in Memristor‐Selector Integration for High‐Density Memory and Compute‐in‐Memory Systems

Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.
Selector integration enables scalable memristor crossbar arrays by suppressing sneak‐path currents and improving array selectivity. This review summarizes integration strategies, device requirements, challenges, and opportunities for high‐density memory, compute‐in‐memory, and neuromorphic computing systems.
Zohreh Hajiabadi, David B. Thomas, Harold M. H. Chong, Firman M. Simanjuntak   +3 more
wiley   +1 more source

Design of low delay low power hybrid logic based flip-flop using FinFET

e-Prime: Advances in Electrical Engineering, Electronics and Energy
The need for a low-power and high-speed technology for computation of digital signals is rising due to the fast growth of technological innovations. Flip-flops serve as fundamental elements in signal processing technologies.
Syed Sadiq Vali, Ashok kumar N
doaj   +1 more source

Carrier Mobility Enhancement in Two‐Dimensional Semiconductor

Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo, Yuehao Li, Xiangkai Liu, Chao Tan, Guohua Hu, Mingdong Dong, Zegao Wang   +6 more
wiley   +1 more source

Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors

, 2018
In this paper, we proposed a novel saddle type FinFET (S-FinFET) to effectively solve problems occurring under the capacitor node of a dynamic random-access memory (DRAM) cell and showed how its structure was superior to conventional S-FinFETs in terms ...
Young Kwon Kim, Myoung Jin Lee, Jin Sung Lee, Young Pyo Cho, Geon Kim, Young June Park, Taesik Park, Hui Jung Kim   +7 more
core   +1 more source

Introducing 5-nm FinFET technology in Microwind

, 2021
This paper describes the implementation of a high performance FinFET-based 5-nm CMOS technology in Microwind. After a general presentation of the electronic market and the roadmap to 1nm technology, design rules and basic metrics for the 5-nm node are ...
Trojman, Lionel, Sicard, Etienne
core   +1 more source

Demonstration Highly Scalability of Ultra-Thin EOT HfO₂-ZrO₂-HfO₂ Gate Stacks With 25 nm L_g FinFET for Advanced CMOS Technology

IEEE Journal of the Electron Devices Society
We demonstrate the high scalability of equivalent oxide thickness (EOT) scaled HfO2-ZrO2-HfO2 (HZH) gate stacks based on FinFETs with a physical gate length $(L_{\mathrm { g}})$ of 25 nm.
Kun Zhong, Zhaohao Zhang, Siyuan Liu, Haiyuan Lyu, Junfeng Li, Huaxiang Yin   +5 more
doaj   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source