Results 61 to 70 of about 19,628,440 (150)

Triple-Node FinFET with Non-Ohmic Schottky Junctions for Synaptic Devices

, 2023
A triple-node FinFET (TriNo-FinFET) with non-ohmic Schottky junctions is demonstrated for an artificial synapse. The three mechanisms of thermionic emission in a subthreshold region, tunneling in a transition region, and drift transport in an inversion ...
Kim, Jin-Ki, Yu, Ji-man, Kim Jin-Ki, Jeon, Seung-Bae, Han, Joon-Kyu, Kim, Seong-Yeon, Choi, Yang-Kyu   +6 more
core   +1 more source

ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures

, 2009
This paper reports the first ESD results on NMOS and gated diode devices processed in a bulk FinFET technology. A comparison with SOI FinFET performance is carried out, highlighting the role of device geometry and three-dimensional architecture. Moreover,
C. RUSS, GRIFFONI, ALESSIO, D. TREMOUILLES, M. SCHOLZ, L. WITTERS, G. GROESENEKEN, S. THIJS, N. COLLAERT, D. LINTEN, MENEGHESSO, GAUDENZIO   +9 more
core  

Simulation of 3D FinFET doping profiles by ion implantation

, 2012
Evaluation of the dopant distributions in the FinFET is an essential part of their design. Doping profiles resulted from ion implantation and diffusion in contemporary 3D FinFET structure are studied using simplified but fast simulation technology. A set
Asenov, Asen, Cheng, Binjie, Asen Asenov, Wang, Liping, Binjie Cheng, Brown, Andrew R., Liping Wang, Andrew R. Brown   +7 more
core   +1 more source

Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in InxGa1-xAs FinFET

, 2015
In this letter, we present a comparative study of positive bias temperature instability (PBTI) reliability in InxGa1-xAs FinFET with varying Indium (x = 0.53, 0.70) percentage and quantization [bulk, quantum well (QW)].
DATTA, S, Mahapatra, Souvik, Datta, Suman, Thathachary, Arun V., Agrawal, Nidhi, THATHACHARY, AV, MAHAPATRA, S, AGRAWAL, N   +7 more
core   +1 more source

Investigation of a 3 nm Strained Fin Field-Effect Transistor (FinFET) [PDF]

, 2023
Fin Field-Effect Transistor (FinFET) device is qualified for its low-power operation capability at which the performance can be improved with further scaling.
Tan, Pei Xin
core  

Fringing gate capacitance model for Triple-Gate FinFET

, 2013
In this paper, a semi-analytical extrinsic gate capacitance model for Triple Gate FinFET, based on threedimensional numerical simulations, is presented. The model takes into account the source/drain electrode and contact areas.
Martinez-Lopez, A. G., Raskin, Jean-Pierre, 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems – SiRF’13, Tinoco, J. C., Salas, S., Alvarado, J.   +5 more
core  

A New Extended Body FinFET for 1T-DRAM Application

, 2014
In this paper, we propose a new extended body FinFET (EB-FinFET) for one transistor dynamic random access memory (1T-DRAM) application. As the device scales down, 1T-DRAM faces the challenge of an insufficient storage region.
Chang, Cheng-Hsien
core  

A Model of Threshold Voltage in FinFET

, 2011
A physics-based threshold voltage model is proposed, according to the electrostatics distribution in Si body of FinFET which is obtained by 2-D numerical simulation.
X.H. Zhang, Jian Liu, Li Li
core   +1 more source

Comparative Study on RTN Amplitude in Planar and FinFET Devices

, 2017
In this paper, the amplitude of random telegraph noise (RTN) in FinFET is studied, comparing with RTN in planar devices. The impacts of intrinsic characteristics in FinFET (channel non-uniformity and quantum confinement) on its RTN amplitude are ...
Asenov, Asen, Zexuan Zhang, Asen Asenov, Shaofeng Guo, Zhang, Zexuan, Guo, Shaofeng, Zhang, Zhe, Wang, Runsheng, Runsheng Wang, Cheng, Binjie, Ru Huang, Binjie Cheng, Xingsheng Wang, Wang, Xingsheng, Zhe Zhang, Huang, Ru   +15 more
core   +1 more source

Performance and Leakage Optimization with 22nm Bi-level FinFET

, 2014
In this paper, we analyze on- and off-current characteristic of the 22-nm Bi-level FinFET in which two different fin widths are formed. From the 3D Technology CAD (TCAD) simulations, we find out that the narrower the fin width the lower the leakage ...
Jaemin Lee, Lee, Jaemin, Kim, Youngmin, Youngmin Kim   +3 more
core   +1 more source