Results 51 to 60 of about 19,628,440 (150)

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

physica status solidi (a), Volume 223, Issue 11, 10 June 2026.
We introduce a diamond optically gated field effect transistor (DOGFET) which combines high‐speed high‐power operation with exotic single transistor memory. The transistor uses deep level donor type nitrogen traps in type 1b diamond that are optically excited to enable electrostatic gating of the device.
Soumak Nandi, Ethan White, Qinghui Shao, Bikramjit Chatterjee, Clint D. Frye, Dylan M. Evans, Mohamadali Malakoutian, Srabanti Chowdhury, Lars Voss, Shaloo Rakheja   +9 more
wiley   +1 more source

Introducing 14-nm FinFET technology in Microwind

, 2017
This paper describes the implementation of a high performance FinFET-based 14-nm CMOS Technology in Microwind. New concepts related to the design of FinFET and design for manufacturing are also described.
Sicard, Etienne
core   +1 more source

Plasma‐Sequence‐Engineered Atomic Layer Deposition of Ultra‐Thin SiNx for Enhanced Etching Resistance in Extreme Ultraviolet Pellicles

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim, Sung Kyu Jang, Jihun Kim, Jong‐Hyun Choi, Ji‐Beom Yoo, Hyun‐Mi Kim, Seul‐Gi Kim, Hyeongkeun Kim   +7 more
wiley   +1 more source

Dependability analysis of nano-scale FinFET circuits

, 2006
FinFET technology has been proposed as a promising alternative for deep sub-micro bulk CMOS technology, because of its better scalability. Previous work have studied the performance or power advantages of FinFET circuits over bulk CMOS circuits.
Bernstein, Kerry, Luo, Yan, Xie, Yuan, Wang, Feng   +3 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

MFMIS Negative Capacitance FinFET Design for Improving Drive Current

, 2020
The effect of remnant polarization (Pr), coercive electric-field (Ec), and parasitic capacitance of baseline device on the drive current (ION) of a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) negative capacitance FinFET (NC FinFET) was ...
Jinhong Min, Changhwan Shin
core   +1 more source

Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD

, 2022
In this work, we present a radio frequency (RF) assessment of the nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device were compared with GaN-FinFET and conventional FinFET (Conv.
Yehia Massoud, Massoud, Yehia Mahmoud, Amit Kumar Goyal, Goyal, Amit Kumar, Gupta, Neha, Ajay Kumar, Kumar, Ajay, Massoud, Yehia, Neha Gupta   +8 more
core   +1 more source

Molecular Design Toward High‐Performance Solution‐Processable Push–Pull Zinc(II) Porphyrin‐Based Resistive Memory Devices: From Binary to Ternary Memory Behavior

Small Science, Volume 6, Issue 5, May 2026.
A series of zinc(II) porphyrin‐based D−A complexes is employed to fabricate solution‐processable resistive memory devices. The utilization of an electron‐donating π‐bridge or a weak electron‐donating moiety is able to turn on an extra resistive state to realize ternary memory performance, demonstrating the relationship between memory behavior and ...
Ka Wai Kwong, Hing Chan, Ming‐Yi Leung, Eugene Yau‐Hin Hong, Shiu‐Lun Lai, Vivian Wing‐Wah Yam   +5 more
wiley   +1 more source

Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices

, 2007
Double-gate and tri-gate FinFET type memories with nitride (SONOS-like) or Si nanocrystals storage with minimum feature sizes of 10 nm were realized. Strong performance advantages in program / erase characteristics and reliability deeply linked to the ...
Breuil L, Melanotte M, Corso D, De Salvo B, Iannaccone G, Barbera P, Bongiorno C, Costa G, Cina G, Nowak E, Tripiciano E, Puglisi R, Coccorese C, Van Houdt J, Garozzo C, Rimini E, Perniola L, Ancarani V, Jahan C, Vecchio M, Iacono G, Gerardi C, Lombardo S   +22 more
core   +1 more source

Impact of high-κ spacer on circuit level performance of junctionless FinFET

, 2017
This paper shows the circuit level performance comparison of low-κ and high-κ spacer Junctionless FinFET(J-FinFET). TCAD simulations show that for high-κ (HfO2, κ=22) spacer J-FinFET, the device performance parameters such as DIBL (drain induced barrier ...
Mohapatra, Nihar Ranjan, Nihar Ranjan Mohapatra, Mekie, Joycee, Joycee Mekie, Neelam Surana, Surana, Neelam   +5 more
core   +1 more source