Results 21 to 30 of about 562 (143)
A 7-nm-Based 5R4W High-Timing Reliability Regfile Circuit
IET Circuits, Devices and Systems, 2023 Register file (Regfile), as the bottleneck circuit for processor data interaction, directly determines the computing performance of the system. To address the read/write conflict and timing error problems of register heap, this paper proposes a 5R4W high-
Wanlong Zhao +3 more
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Limits on Fundamental Limits to Computation [PDF]
, 2014 An indispensable part of our lives, computing has also become essential to industries and governments. Steady improvements in computer hardware have been supported by periodic doubling of transistor densities in integrated circuits over the last fifty ...
Markov, Igor L.
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, 2021 To present their work in the field of micromachining, researchers from distant parts of the world have joined their efforts and contributed their ideas according to their interest and engagement. Their articles will give you the opportunity to understand
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IEEE Journal of the Electron Devices Society, 2018 Improved electrical characteristics of CMOS inverters composed of Ge n- and p-finFETs were demonstrated by utilizing newly introduced Ge surface treatments.
M.-S. Yeh +18 more
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Low Power FinFET based SRAM Cell Design [PDF]
, 2016 With the incessant developments occurring in VLSI circuits and systems arena and power dissipation becoming a major design constraint, the power component can be considerably reduced through efficient designing of the SRAM memory elements.
, Ayon Manna, Sudarshan Patil, V S Kanchana Bhaaskaran
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Performance Analysis of FinFET Based Inverter circuit, NAND and NOR Gate at 22nm and 14nm Node technologies. [PDF]
, 2015 The size of integrated devices such as PC, mobiles etc are reducing day by day with multiple operations, all of these is happening because of the scaling down the size of MOSFETs which is the main component in memory, processors and so on.
, Raju Hajare, Sunil C, Sumanth Jain P R, Anish Kumar A R, Sriram AS
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Fin Field Effect Transistors Performance in Analog and RF for High-k Dielectrics [PDF]
, 2011 The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The impact of a high-k gate dielectric on the device short channel performance and scalability of nanoscale double gate Fin Field Effect Transistors (FinFET ...
Kumar, P. Vijaya, Nirmal, D.
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Diamond FinFET without Hydrogen Termination
Scientific Reports, 2018 In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective ...
Biqin Huang +3 more
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Low-Power And High Performance Of An Optimized FinFET Based 8T SRAM Cell Design [PDF]
, 2019 The development of the nanotechnology leadsto the shrinking of the size of the transistors to nanometerregion. However, there are a lot of challenges due to sizescaling of the transistors such as short channel effects (SCEs)and threshold voltage roll-off
A. Riyadi, Munawar +4 more
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Engineering and Applied Science Research, 2022 This study presents a novel CMOS self-gated flip flop for low power and area efficient applications. The low power operations are achieved by deactivating the clock signal when not required in the circuit.
Owais Ahmad Shah +2 more
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