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Fabricação de protótipos de FinFETs usando métodos alternativos [PDF]

, 2018
Orientadores: Leandro Tiago Manera, José Alexandre DinizDissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de ComputaçãoResumo: Este trabalho explora métodos alternativos para fabricação de protótipos de ...
Leonhardt, Alessandra, 1990-
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Beiträge zur Herstellung von MOSFETs in Germaniumschichten [PDF]

, 2012
Germanium has been the material of choice for the very first transistor devices in the 50s and 60s of the last century. However, silicon became the dominant semiconductor in the following decades due to lower leakage currents and the excellent properties
Kaiser, Rolf Jochen
core +1 more source

Architectures avancées des transistors FinFETs: Réalisation, caractérisation et modélisation [PDF]

, 2006
The dimensions downscaling for the next nodes of the microelectronics industry is handicapped by technological problems more and more difficult to overcome. Multigate MOS architectures have been proposed to continue further the downscaling.
Ritzenthaler, Romain
core +2 more sources

Vertical Integration of Germanium Nanowires on Silicon Substrates for Nanoelectronics. [PDF]

Rapid development of semiconductor industry in recent years has been primarily driven by continuous scaling. As the size of the transistors approaches tens of nanometers, we are faced with challenges due to technological and economic reasons. To this end,
Chen, Lin
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The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length. [PDF]