Vertical Integration of Germanium Nanowires on Silicon Substrates for Nanoelectronics. [PDF]
Rapid development of semiconductor industry in recent years has been primarily driven by continuous scaling. As the size of the transistors approaches tens of nanometers, we are faced with challenges due to technological and economic reasons. To this end,
Chen, Lin
core
Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low-Power Applications [PDF]
core +1 more source
Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]
Yang HC +4 more
europepmc +1 more source
The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length. [PDF]
Saha P +4 more
europepmc +1 more source
Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm<sup>2</sup>. [PDF]
Song CW, Lee T, Kim D, Kyoung S, Woo S.
europepmc +1 more source
High performance and low leakage heterojunction 10 nm PZT NC-FinFET for low power application. [PDF]
Tripathi SL +3 more
europepmc +1 more source
Design and analysis of NC-FinFET using Pb(Zr<sub>y</sub>Ti<sub>1-y</sub>)O<sub>3</sub> under high ionising radiations. [PDF]
Tripathi SL +4 more
europepmc +1 more source
Exploration and Analysis of GaN-Based FETs with Varied Doping Concentration in Nano Regime for Biosensing Application. [PDF]
Saha A +6 more
europepmc +1 more source
Novel Tunable Pseudoresistor-Based Chopper-Stabilized Capacitively Coupled Amplifier and Its Machine Learning-Based Application. [PDF]
Farshori MA +8 more
europepmc +1 more source
FinFET 6T-SRAM All-Digital Compute-in-Memory for Artificial Intelligence Applications: An Overview and Analysis. [PDF]
Gul W, Shams M, Al-Khalili D.
europepmc +1 more source

