Results 81 to 90 of about 18,840,038 (173)

Exploration and Analysis of GaN-Based FETs with Varied Doping Concentration in Nano Regime for Biosensing Application. [PDF]

Biosensors (Basel)
Saha A, Singh S, Dhar RS, Ghosh K, Seteikin AY, Banerjee A, Samusev IG.   +6 more
europepmc   +1 more source

FinFET 6T-SRAM All-Digital Compute-in-Memory for Artificial Intelligence Applications: An Overview and Analysis. [PDF]

Micromachines (Basel), 2023
Gul W, Shams M, Al-Khalili D.
europepmc   +1 more source

Novel Tunable Pseudoresistor-Based Chopper-Stabilized Capacitively Coupled Amplifier and Its Machine Learning-Based Application. [PDF]

Micromachines (Basel)
Farshori MA, Nizamuddin M, Bheemana RC, Prakash K, Bansal S, Zulqarnain M, Sharma V, Babu SS, Kaur K.   +8 more
europepmc   +1 more source

Structurally optimized SiC CMOS FinFET for high-temperature and low-power SoC logic integration. [PDF]

Sci Rep
Kwon TS, Yoon YJ, Park DY, Bae JH, Song YS, Kim HW, Seo JH, Woo SY.   +7 more
europepmc   +1 more source

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET. [PDF]

Nanomaterials (Basel), 2023
Yao YJ, Yang CR, Tseng TY, Chang HJ, Lin TJ, Luo GL, Hou FJ, Wu YC, Chang-Liao KS.   +8 more
europepmc   +1 more source

From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]

Nanomaterials (Basel)
Petkov N, Fagas G.
europepmc   +1 more source

Design of low power and high speed approximate multipliers utilizing current mode 4 to 2 compressors based on CNTFET technology. [PDF]

Sci Rep
Foroutan P, Navi K.
europepmc   +1 more source

Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. [PDF]

Sci Rep
Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, de Kruijf M, Carballido MJ, Svab S, Kuhlmann AV, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N.   +21 more
europepmc   +2 more sources

Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. [PDF]

Nanomaterials (Basel)
Yugender P, Singh S, Kumar K, Dhar RS, Seteikin AY, Banerjee A, Samusev IG.   +6 more
europepmc   +1 more source

ELECTRICAL PROPERTIES OF FINFET STRUCTURES

, 2007
A. N. Nazarov, D. Flandre, M. Jurczak, N. Collaert, T. E. Rudenko, V. I. Kilchytska, V. S. Lysenko   +6 more
core   +1 more source